Abstract: This invention is concerned with production of electrical devices comprising an electrodeposited conductive region free from cracking defects. In the production of a contact portion of the device from a metal strip electroplated with a conductive stripe of an alloy, the stripe exhibited, upon stamping and forming operation, cracked areas. Typically, the stripe coating on the metal strip, such as a copper bronze material, includes a layer of nickel, a layer of palladium alloyed with nickel, cobalt, arsenic or silver, and a flash coating of hard gold. The cracking defects were eliminated by subjecting the plated strip to an annealing treatment prior to the stamping and forming operation. After the heat-treatment, the stripe was free from cracks and separations between the successive layers.

Abstract: This invention is a simple and effective process of producing a plastic pin grid array package having an encapsulated device and a heat sink forming a unitary component of a main planar body of the package. The process includes fabrication of a laminated planar main body having outer plastic sheets provided with metallizations, a metal sheet of high thermal conductivity, and plastic sheets positioned intermediate the outer plastic sheets and the metal sheet, the metal sheet having clearance holes filled with plugs of the material of the intermediate plastic sheets, a plurality of plated-through holes (PTHs) formed in the main body and terminal pins secured in the PTHs. Some of the PTHs contacting the metal sheet and some passing through the plugs in the clearance holes out of contact with the metal sheet. The device, such as an integrated circuit chip, mounted in a recessed cavity in the main body, is in contact with the metal heat-sink.

Abstract: The present invention is a molded Hybrid Integrated Circuit package in which a carrier substrate with a various circuit elements including an integrated circuit is supported within a resilient cradle formed by down-set and compliant portions of leads arranged in a quad configuration around the periphery of the carrier substrate, with ends of the down-set portions being secured to pads arranged on the periphery of the carrier substrate. Prior to the assembly with carrier substrate and molding of the resultant subassembly, the leads form a part of a lead frame including elongated bar and dam-bar on each of the quad sides interconnecting end and central portions, respectively, of the leads, and an interconnecting array of connecting links and bridges at the ends of the dam-bars.

Abstract: A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.

Abstract: An electroplating process is described for electroplating alloys of palladium and arsenic. The resulting electrodeposits are bright, ductile and remain ductile and crack-free even when the electrodeposits are quite thick. The deposits are quite hard and suitable for contact surfaces particularly in situations where wear characteristics require thick deposits. The electroplating process is also useful for making articles such as bellows by electroform procedures particularly since the electroplated material has extraordinary physical properties (good resilience, low stress and ductility) as well as good corrosion resistance.

Abstract: High magnetic anisotropy is achieved in bismuth-iron garnet materials which comprise a significant amount of europium, samarium, or terbium. Such materials may be made in the form of epitaxial layers grown on a nonmagnetic substrate, e.g., in the manufacture of magnetic bubble devices. On account of significant Faraday rotation, such materials may also be used in magnetic-optical devices.

Abstract: A process for manufacturing an optical fiber includes the steps of heating and drawing material from a hot optical fiber preform; exposing the hot optical fiber to a compound containing carbon for depositing a carbon coating on the moving optical fiber; measuring an electrical property of the carbon coating; and in response to the measured electrical property, changing a parameter of the process for controlling a characteristic of the carbon coating on the moving optical fiber. Featured within the manufacturing method is a method for measuring the thickness of the carbon coating on the moving optical fiber. From the measured thickness of the carbon coating, a control signal is generated for changing one or more of the process parameters for depositing the carbon coating on the optical fiber from a precursor gas. The coated optical fiber continuously moves through the process without any physical contact. No interruption of the production process occurs.

Abstract: This invention concerns with a non-alloyed ohmic contact to III-V semiconductor material in a III-V semiconductor device on a Si base. The ohmic contact includes at least one set of layers comprising a delta-doped monolayer and a thin layer of undoped III-V semiconductor material which is 2.5 nm or less in thickness, said at least one set of layers being upon a doped III-V semiconductor layer. An epitaxial layer of metal upon an uppermost of the layers of the said set of layers completes the ohmic contact, said metal being capable of wetting the surface of the III-V semiconductor material and of being epitaxially grown on the said III-V semiconductor material. At least the said at least one set of layers and the metal layer are deposited by Molecular Beam Epitaxy, thus avoiding formation of oxides and growing the metal epitaxially so that the metal layer is crystalline at least near the interface between the metal and the semiconductor material.