Patents Represented by Attorney, Agent or Law Firm Oblon, Spivack, McClelland, Maier & Neustadt, P.C.
  • Patent number: 7488499
    Abstract: The present invention relates to a hair growth inhibitor and a depilation accelerator, each comprising a crude drug selected from Bupleuri Radix, Perillae Herba, Rhel Rhizoma and Akebiae Caulis, or an extract thereof. This inhibitor or accelerator makes it possible to inhibit the growth of body hair or promote depilation, respectively, thereby reducing the frequency of hair removal treatment. Moreover, it makes the hair body finer, thereby facilitating the removal of the hair from feet or arms.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: February 10, 2009
    Assignee: Kao Corporation
    Inventors: Etsuji Wakisaka, Takashi Kitahara, Naoko Tsuji, Hiroshi Kusuoku
  • Patent number: 6717979
    Abstract: A method for estimating a direction of arrival of a signal transmitted by a signal source and received by an antenna array. The method estimates the covariance matrix of the signals received by the antennas of the array and derives therefrom a direction of arrival. The received signals are correlated with a reference signal transmitted by the source prior to being submitted to the covariance matrix estimation.
    Type: Grant
    Filed: April 22, 2002
    Date of Patent: April 6, 2004
    Assignee: Mitsubishi Electric Information Technology Centre Europe B.V.
    Inventors: Alexandre Ribeiro Dias, Loïc Brunel
  • Patent number: 5574303
    Abstract: The present invention provides a semiconductor device which is excellent in voltage sense characteristic and simple in manufacturing process. P diffusion regions 12 and 13 are selectively formed on a first major surface of an N.sup.- substrate 11, an electrode 31 is formed on the P diffusion region, a sense electrode 32 is formed on the P diffusion region 13, and an electrode 33 is formed on a second major surface of the N.sup.- substrate. Then, the electrode 31 is set at 0 V, constant current is led to the sense electrode 32, and the electrode 33 is positively biased. Thus, the voltage applied to the electrode 33 is sensed from a potential obtained at the sense electrode 32. A distance between the P diffusion regions 12 and 13 which determines a voltage sense characteristic can be accurately controlled, and a good voltage sense characteristic can be obtained. Moreover, a manufacturing process is relatively simple.
    Type: Grant
    Filed: October 19, 1994
    Date of Patent: November 12, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tomohide Terasima, Mituharu Tabata, Masao Yoshizawa, Kazumasa Satsuma