Patents Represented by Attorney Oblon, Spivak, McClelland, Maie & Neustadt, L.L.P.

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  • Resistance change memory device
    Patent number: 8194434
    Abstract: A resistance change memory device including: a cell array with memory cells arranged therein, the memory cell storing a resistance state as data in a non-volatile manner; a write buffer configured to supply voltage and current to a selected memory cell in accordance with data to be written in it; and a write control circuit configured to make a part of current supplied to the selected memory cell flow out in accordance with the selected memory cell's state change in a write mode.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: June 5, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Haruki Toda