Abstract: To dissolve a calcium hydroxide-based root canal filler having been carbonated and fixed within a root canal, which cannot be removed from the root canal by means of a reamer and a file, during doing the root canal treatment again, and to sterilize the root canal, the solubilizing agent of the carbonated calcium hydroxide-based root canal filler includes water containing 1 to 60% by weight of the whole of at least one acid selected from the group consisting of phosphoric acid, gluconic acid, fumaric acid, lactic acid, glycolic acid, propionic acid, malic acid, maleic acid, citric acid, succinic acid, tartaric acid, acetic acid, glycerophosphoric acid, and malonic acid; and 0.1 to 30% by weight of the whole of at least one sterilizing properties-imparting agent selected from the group consisting of an iodine preparation, a surfactant, a bactericide, hydrogen peroxide, and limonene.

Abstract: Obtained is a method of manufacturing a semiconductor device which can take a body contact while electrically isolating an NMOS transistor and a PMOS transistor from each other through a complete isolation. First of all, element isolating films (7a to 7c) of a partial isolation type are formed in a first main surface of a silicon layer (3). Next, a PMOS transistor, an NMOS transistor, a multilayer wiring structure, a spiral inductor (20) and a pad (22) are formed, respectively. Then, a support substrate (23) is formed over the whole surface. Thereafter, a silicon substrate (1) and a BOX layer (2) are removed to expose a second main surface of the silicon layer (3). Subsequently, element isolating films (27a to 27d) connected to the element isolating films (7a and 7b) are formed on the second main surface side of the silicon layer (3). Consequently, a complete isolation can be obtained.

Abstract: Provided is a substrate of a semiconductor integrated circuit which can easily manufacture an integrated circuit having a soft error resistance, a latch up resistance and an ESD resistance increased. A thickness of a semiconductor surface layer having a lower impurity concentration than that of each of substrate single crystals 51 and 55 is varied according to a resistance which should be possessed by each section such as a memory cell section 5, a logic section 6, an input-output section 8 or the like for a region where each section is to be formed.