Patents Represented by Attorney Oblon, Spivak, McClellland, Maier & Neustadt, P.C.
  • Patent number: 7584546
    Abstract: Device for checking the alignment of a water jet in a water-jet cutting system, comprising means for positioning an annular element at the outlet of a focusing tube, at some distance from this outlet and aligned with respect to the axis of this focusing tube, this annular element having an internal diameter equal to that of the internal channel of the focusing tube.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: September 8, 2009
    Assignee: SNECMA
    Inventors: Jean-Francois Laurent Chabot, Alexis Perez-Duarte, Kadour Raissi
  • Patent number: 7513740
    Abstract: A turbine ring made up of an assembly of a plurality of sectors forming the outer shroud of the rotor of said turbine. The sectors are united end to end with interposed sealing systems comprising tongues housed in slots, said tongues being rectilinear and engaged in respective rectilinear slots in the radial faces of said sectors.
    Type: Grant
    Filed: April 12, 2005
    Date of Patent: April 7, 2009
    Assignee: SNECMA
    Inventors: Nicolas Hervy, Marc Marchi, Ludovic Nicollas
  • Patent number: 7043977
    Abstract: A sensor support includes a rigid insert, on which a sensor is installed, and a flexible envelope fitted at a bottom face thereof with a double-sided adhesive to bond the sensor support to an aircraft structure Assembly and disassembly of the sensor are easy and the air flow is only slightly disturbed. This device is applicable to flight test campaigns of an aircraft or simulated flights to measure noise or pressure.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: May 16, 2006
    Assignee: Airbus France
    Inventor: Herve Magnin
  • Patent number: 6501129
    Abstract: Formed in a part of the base region is an impurity diffusion region extending in a vertical direction and having an impurity concentration lower than that in the other portion of the base region. By the formation of the impurity diffusion region, the depletion layer is extended toward the base region so as to improve the breakdown voltage. The impurity diffusion region is formed by forming a trench in a part of the base region, a conductive film being buried in the trench, followed by introducing by ion implantation an impurity of the conductivity type equal to that in the base region into the side wall and the bottom of the trench in a concentration lower than that in the base region and subsequently diffusing the implanted impurity ions. The impurity diffusion region thus formed permits relaxing the electric field concentration on the corner portion of the gate trench and on the extended portion of the base region so as to improve the breakdown voltage.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: December 31, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Akihiko Osawa
  • Patent number: D558244
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: December 25, 2007
    Assignee: Sony Corporation
    Inventor: Takashi Ikenaga