Abstract: A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor, or flowed to an ionization chamber to generate ionic species for ion implantation.
Type:
Grant
Filed:
August 5, 1997
Date of Patent:
December 14, 1999
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Gautam Bhandari, W. Karl Olander, Michael A. Todd, Timothy Glassman