Abstract: A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.
Type:
Grant
Filed:
June 30, 1998
Date of Patent:
October 17, 2000
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Frank S. Hintermaier, Bryan C. Hendrix, Jeffrey F. Roeder, Debra A. Desrochers, Thomas H. Baum