Abstract: A security circuit includes an electrical fuse read only memory (ROM) including a plurality of electrical fuse units. The electrical fuse units are arranged to correspond to bit values of an initial security key before the electrical fuse ROM is programmed.

Abstract: Systems and methods are provided for probing an occluded body lumen, including a flexible conduit insertable into the body lumen, at least one delivery waveguide and at least one collection waveguide integrated with the flexible conduit and arranged to deliver and collect radiation about a distal end of said flexible conduit, at least one radiation source connected to a transmission input of the at least one delivery waveguide, at least one optical detector connected to a transmission output of at least one collection waveguide, a spectrometer connected with the at least one optical detector, and constructed and arranged to scan radiation and perform spectroscopy, and a controller programmed to process data from said spectrometer and provide information for directing said flexible conduit through obstacles within the occluded body lumen.

Abstract: A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

Abstract: A semiconductor memory device includes a refresh control circuit and a memory cell array. The refresh control circuit generates an internal auto refresh control signal based on a chip select signal and an external self refresh control signal. The memory cell array is refreshed in response to the internal auto refresh control signal. Because the semiconductor memory device internally generates the internal auto refresh control signal performing auto refresh operations, the semiconductor memory device may not be required to transmit to external devices for performing the auto refresh operations, and thus pins or pads for transmitting signals may be reduced and operation time may become faster.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed on an active region of a substrate. An exposed portion of the substrate is removed to form a trench in the substrate. A preliminary first insulation layer is formed on a bottom and sidewalls of the trench and the mask pattern. A plasma treatment is performed on the preliminary first insulation layer using fluorine-containing plasma to form a first insulation layer including fluorine. A second insulation layer is formed on the first insulation layer to fill the trench. A thickness of a gate insulation layer adjacent to an upper edge of the trench may be selectively increased, and generation of leakage current may be reduced.