Abstract: A magnetoresistive sensor having spaced electrically conductive lead structures comprising a thin film of tungsten having a thin film overlayer, or, alternatively a thin film underlayer and a thin film overlayer, with both the thin film underlayer and the thin film overlayer formed of a material taken from the groups consisting of Ti, Ta, Cr, Zr, Hf, and TiW.
Type:
Grant
Filed:
August 18, 1988
Date of Patent:
April 3, 1990
Assignee:
International Business Machines Corporation
Inventors:
James K. Howard, Hung-Chang W. Huang, Cherngye Hwang