Abstract: A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.

Abstract: Copper based alloys, e.g. CuNiSnSi are processed by annealing followed by a high level of cold work area reduction then a recrystallization step which is followed by a low level of cold work prior to spinodal aging. The resultant material is isotropically formable while maintaining high yield strength.

Abstract: High magnetic anisotropy is achieved in bismuth-iron garnet materials which comprise a significant amount of europium, samarium, or terbium. Such materials may be made in the form of epitaxial layers grown on a nonmagnetic substrate, e.g., in the manufacture of magnetic bubble devices. On account of significant Faraday rotation, such materials may also be used in magnetic-optical devices.

Abstract: A rib waveguide polarization modulator is described that permits easy application to monolithic optical circuits. The device comprises a rib waveguide having two polarization modulation sections with a phasing section between the two modulation section. The phasing section adjusts the phase of the optical radiation in the waveguide before it enters the second modulation section.

Abstract: An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.

Abstract: A bistable nematic liquid crystal display cell is electrically switched between topologically equivalent, asymmetric horizontal states. Switching is initiated by application of a symmetry breaking field such as a DC electric field of a predetermined polarity. An AC electric potential is then applied across the cell to complete the switching cycle and maintain the state. The cell includes upper and lower parallel substrates, upper and lower topographically textured tilt alignment surfaces on the corresponding substrates, and nematic liquid crystal material between the substrates. In an active region of the cell, the tilt alignment surfaces form an equal reverse tilt boundary condition. In an isolation region surrounding the active region of the cell, the tilt alignment surfaces are formed to have a parallel tilt boundary condition.