Patents Represented by Attorney P. E. Purwin
  • Patent number: 7553790
    Abstract: The present invention describes a method to increase the activity of a catalyst by first performing an ion exchange step with a potassium ion, followed by performing an ion-exchange step with an ammonium ion. Specifically, the present invention describes a method to increase the acidity of a zeolite by incorporating a potassium salt ion-exchange prior to an ammonium salt ion-exchange step. Even more specifically, the present invention is drawn to a method of increasing the activity of a zeolite by employing more than one potassium ion exchanges followed by at least one ammonium ion exchange. The present invention also describes a method to reduce the amount of sodium normally found in commercially produced zeolite by employing any of these methods. The present invention is also drawn to the catalysts produced by any of these methods.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: June 30, 2009
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: Jean W. Beeckman, Glenn R. Sweeten, Daria N. Lissy, David L. Stern, Stephen J. McCarthy, Dominick N. Mazzone, Christine N. Elia
  • Patent number: 7527782
    Abstract: ITQ-27 (INSTITUTO DE TECNOLOGÍA QUÍMICA number 27) is a new crystalline microporous material with a framework of tetrahedral atoms connected by atoms capable of bridging the tetrahedral atoms, the tetrahedral atom framework being defined by the interconnections between the tetrahedrally coordinated atoms in its framework. ITQ-27 can be prepared in silicate compositions with a organic structure directing agent. It has a unique X-ray diffraction pattern, which identifies it as a new material. ITQ-27 is stable to calcination in air, absorbs hydrocarbons, and is catalytically active for hydrocarbon conversion.
    Type: Grant
    Filed: September 27, 2005
    Date of Patent: May 5, 2009
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: Avelino Corma, Maria José Diaz, Fernando Rey, Karl G. Strohmaier, Douglas L. Dorset
  • Patent number: 7456319
    Abstract: A method is provided for producing primarily para alkyl aromatic amines by alkylating a primary aromatic amine with an olefin in the presence of an acid activated clay.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: November 25, 2008
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: George A Knudsen, Richard H. Schlosberg
  • Patent number: 4245229
    Abstract: An optical recording medium is disclosed which comprises a reflecting material, the surface of which is characterized by cavities of average depth D and of average spacing S such that for incident radiation of wavelength .lambda., S is less than about .lambda./20 and D is either greater than .lambda./6 or less than .lambda./6 and is capable of being altered to either less than or greater than .lambda./6, respectively.In the practice of the invention, the heat from a high intensity energy source, such as a laser operating in the ultraviolet, optical or near-infrared region or a beam of electrons, softens the reflective material at the surface and, depending on the sign of the surface energy, either increases or decreases D, thus lowering or raising the reflectivity of the surface, respectively.
    Type: Grant
    Filed: January 26, 1979
    Date of Patent: January 13, 1981
    Assignee: Exxon Research & Engineering Co.
    Inventor: Richard B. Stephens
  • Patent number: 4236296
    Abstract: Double heterostructure (Al,Ga)As wafer comprising layers of gallium arsenide and aluminum gallium arsenide on a metallized n-GaAs substrate are separated into individual devices for use as diode lasers. In contrast to prior art techniques of mechanically cleaving the wafer in mutually orthogonal directions, the wafer is first separated into bars of diodes by a process which comprises (a) forming an array of exposed lines on the n-side by photolithography to define the lasing ends of the diodes, (b) etching through the exposed metallized portion to expose portions of the underlying n-GaAs, (c) etching into the n-GaAs substrate with a V-groove etchant to a distance of about 1 to 2 mils less than the total thickness of the wafer and (d) mechanically cleaving into bars of diodes.
    Type: Grant
    Filed: October 13, 1978
    Date of Patent: December 2, 1980
    Assignee: Exxon Research & Engineering Co.
    Inventors: Geoffrey R. Woolhouse, Harold A. Huggins, Stephen I. Anderson, Frederick R. Scholl