Abstract: A low cost passive RFID tag uses capacitive or inductive coupling between the RF IC chip and the antenna. Coupling elements are formed directly on the surface of the RF IC chip.

Abstract: The specification describes techniques for evaluating important network performance parameters, for example, call set-up time, for private network-to-network (PNNI) interfaces. These performance parameters are used to determine the optimum size of the peer groups in the PNNI network. Both flat and multi-level networks may be designed using the methods described.

Abstract: The specification describes a DMOS transistor that is fully integrated with an electrostatic protection diode (ESD). The ESD diode is isolated from the DMOS device by a trench. The trench is metallized to tie the guard ring of the ESD to the substrate thereby increasing the current handling capabilities of the ESD. The trench also provides a convenient buried contact to the RF ground.

Abstract: The specification describes a comparator circuit especially designed for high speed applications such as lightwave systems. The comparator is compensated for offset voltages due to current leakage and other variations in the IC components.

Abstract: The specification describes a molded plastic package for a surface normal optoelectronic device. The package is designed to passively align precisely the optoelectronic device with an optical fiber. Passive alignment is achieved by forming the optoelectronic device in a pyramid shape, and forming an identical pyramid shape in a mating molded plastic cover for the device. The mating pyramid shapes serve to center the optical fiber core precisely over the active optical region of the surface normal optoelectronic device.

Abstract: As the size and consequent thickness of IC packages shrink bowing of the package due to differential contractions becomes a problem. The solution according to this invention is to mold strain relief grooves into the surface of the plastic package.

Abstract: A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

Abstract: A fiber optical end connector is disclosed, comprising a grooved base member having mounted thereupon a grooved silicon block, and means for holding optical fibers in the grooves on the base member and on the silicon block.

Abstract: The presence of hydroxyl impurities (--OH) in optical fiber precursor materials produces optical losses in fibers made from the precursor material, as in the modified chemical vapor deposition process. Typical precursor materials include SiCl.sub.4, GeCl.sub.4, POCl.sub.3, and PCl.sub.3. Losses due to --OH impurities occur near various wavelengths of current interest for optical communications systems. Adding chlorine and PCl.sub.3 to impure SiCl.sub.4, GeCl.sub.4, or POCl.sub.3 reduces the amount of --OH impurities and produces POCl.sub.3 and HCl. The HCl may be readily removed, while the POCl.sub.3 is typically left in the material. Bromine may be used instead of chlorine, and PBr.sub.3 may be used instead of PCl.sub.3. In addition, --OH impurities in PCl.sub.3 may be removed by the addition of chlorine or bromine, with the resulting HCl or HBr typically being removed.

Abstract: The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

Abstract: The nonlinear properties of the ternary ferroelectric barium fluorides permit noncritical phase matching in the vicinity of 1.06 microns at room temperature. The crystals can tolerate powers of up to approximatey 10.sup.9 watts/cm.sup.2 and may be used as the essential element in second harmonic generators. These devices operate at room temperature without any need for sophisticated temperature control.

Abstract: An integrated injection logic circuit cell structure and its fabrication are simplified. A pattern of oxide isolation regions is used to define, at least partially, the introduction of two types of impurities in such a way as to reduce the number of masking steps. Certain of these oxide regions do not penetrate through the conventional epitaxial layer, leaving a lateral buried path to serve as the base of a lateral injection transistor. A pattern of polycrystalline silicon containing impurities is used both as a diffusion source and an interconnection.

Abstract: z-face quartz of good quality suitable for piezoelectric applications can be grown at rates near 35 mil/da at p-T conditions easily accessible in commercial autoclaves. The growth conditions are predictable from previous systematic studies of growth rate. Cracking of grown crystals either during growth or in crystal processing can be severe and can account for as much as 15-50% yield loss. However, much of this loss can be reduced by carefully screening seeds for strain using the new polariscopic technique of the invention. Strain (and cracking) are severe with growth on highly strained seeds and at high growth rates. Carefully choosing seeds reduces the strain in the grown material for a given growth rate.

Abstract: A method for recovering plastic from plastic insulated wire scrap involving separating the plastic from short segments of the wire by agitating the segments in a heated dry powder medium until the metal is released from the plastic insulation, separating the metal from the plastic insulation leaving at least 0.5% by weight of the powder intermixed with the plastic insulation.

Abstract: Glass fiber optical-waveguides consisting of a metal oxide-silicate glass core and silica cladding are produced according to the invention by means of a metal evaporation technique. An evacuated fused silica tube containing an evaporated metal deposit is heated to temperatures sufficient to form a uniform metal silicide layer on its inner surface. This layer is then oxidized and reacted with the silica tubing at elevated temperatures to form a metal oxide-silica glass layer. The tube is then collapsed to give a solid rod preform with a metal oxide-silica glass core. Fibers drawn from such preforms exhibit a graded refractive index profile and low loss. The details of the fabrication technique are described, and a representative loss spectrum is presented.

Abstract: An improved technique for producing optical fibers is disclosed. In this technique the optical fiber preform is fabricated by axial deposition from a direction along the preform axis as opposed to radial deposition from a direction perpendicular to the preform axis. The instant technique does not require a cylindrical mandrel and, consequently, the technique does not require removal of a mandrel and the collapse of a non-solid preform prior to drawing. In addition to these advantages, the technique may be used to form optical fibers with highly resolved longitudinal gradations in index of refraction. The resolution of such gradations when formed using the instant technique is limited only by the deposition rate and the ability to rapidly alter the concentration of the material being deposited.

Abstract: The nonlinear properties of LiClO.sub.4.3H.sub.2 O permit noncritical phase matching in the vicinity of 5200 Angstroms at room temperature. This material may be used as the essential element in second harmonic generators and other nonlinear devices which could then be operated at room temperature under noncritical phase-matched conditions.

Abstract: In high resolution lithography, resolution impairment sometimes occurs due to dust collecting on the mask. The dust is often attracted to the mask by static electricity. The solution proposed is to coat the entire photomask with a transparent, electrically conductive coating. The coating is electrically grounded to drain static charge. Conductive materials are often used for lithographic masks, but the patterns cannot be grounded effectively because there are island regions in the pattern.If the pattern is itself conducting, there is the added option of applying the antistatic layer under the pattern.If the pattern is formed of a photographic emulsion of a patterned photoresist, it is protected from damage and wear in handling by the harder conductive coating.