Patents Represented by Law Firm Palmatier & Sjoguist
  • Patent number: 4900395
    Abstract: Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.
    Type: Grant
    Filed: April 7, 1989
    Date of Patent: February 13, 1990
    Assignee: FSI International, Inc.
    Inventors: Daniel J. Syverson, Richard E. Novak
  • Patent number: D343991
    Type: Grant
    Filed: June 9, 1992
    Date of Patent: February 8, 1994
    Inventor: Thomas J. Schaeppi