Abstract: A digital imaging system uses a high density, high speed analog/multi-level memory to temporarily store image data at high rates for extended periods of time. A portion of the stored data is transmitted for image processing and compression. When image processing and compression on the data are completed, another portion of the stored data is transmitted for processing. As a result, high speed image capture for extended periods is possible because the processing speed of the image processing and compression no longer limit the time required between high speed bursts or the length of a high speed burst.

Abstract: In an epitaxial structure of a solid state lighting system, electrical current injection into the active layer is used to excite the photon emission. The present invention employs a unique waveguide layer in the epitaxial structure for trapping the light generated by the active layer in the fundamental waveguide mode. Multiple photonic crystal regions located either outside or inside one or more current injection regions extract photons from the waveguide layer(s). This novel design optimizes the interplay of electrical pumping, radiation and optical extraction to increase the optical output to several times that of conventional LEDs. A transparent and conductive ITO layer is added to the surface of an epitaxial structure to reduce the interface reflection in addition to functioning as a current spreading layer. The present invention creates solid state lighting with high optical output and high power efficiency.

Abstract: A persistent snapshot is taken and maintained in accordance with a novel method and system for extended periods of time using only a portion of a computer readable medium of which the snapshot is taken. Multiple snapshots can be taken in succession at periodic intervals and maintained practically indefinitely. The snapshots are maintained even after powering down and rebooting of the computer system. The state of the object of the snapshot for each snapshot preferably is accessible via a folder on volume of the snapshot. A restore of a file or folder may be accomplished by merely copying that file or folder from the snapshot folder to a current directory of the volume. Alternatively, the entire computer system may be restored to a previous snapshot state thereof. Snapshots that occurred after the state to which the computer is restored are not lost in the restore operation. Different rule sets and scenarios can be applied to each snapshot.

Abstract: A persistent snapshot is taken and maintained in accordance with a novel method and system for extended periods of time using only a portion of a computer readable medium of which the snapshot is taken. Multiple snapshots can be taken in succession at periodic intervals and maintained practically indefinitely. The snapshots are maintained even after powering down and rebooting of the computer system. The state of the object of the snapshot for each snapshot preferably is accessible via a folder on volume of the snapshot. A restore of a file or folder may be accomplished by merely copy that file or folder from the snapshot folder to a current directory of the volume. Alternatively, the entire computer system may be restored to a previous snapshot state thereof. Snapshots that occurred after the state to which the computer is restored are not lost in the restore operation. Different rule sets and scenarios can be applied to each snapshot.

Abstract: A programming technique for a flash memory causes electrons to be injected from the substrate into charge storage elements of the memory cells. The source and drain regions of memory cells along a common word line or other common control gate line being programmed by a voltage applied to the common line are caused to electrically float while the source and drain regions of memory cells not being programmed have voltages applied thereto. This programming technique is applied to large arrays of memory cells having either a NOR or a NAND architecture.

Abstract: In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Preferably, in a program verify operation relative to a demarcation threshold level for demarcating between two memory states, the verify operation includes a sequence of two verify sub-cycles, the first sub-cycle performing a verify relative to a first threshold level at a predetermined margin below the demarcation threshold level and the second sub-cycle performing a verify relative to a second threshold level which is identical to the demarcation threshold level. Unlike conventional cases, the second sub-cycle is not performed until any one memory cell of the group has been verified to pass the first threshold.

Abstract: In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The sometimes conflicting needs to maintain data integrity and system performance are balanced by deferring execution of some of the corrective action when the memory system has other high priority operations to perform. In a memory system utilizing very large units of erase, the corrective process is executed in a manner that is consistent with efficiently rewriting an amount of data much less than the capacity of a unit of erase.

Abstract: A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are electrically floating gates. The memory is operated to minimize the effect of charge coupled between adjacent floating gates, by programming some cells a second time after adjacent cells have been programmed. The second programming step also compacts a distribution of charge levels within at least some of the programming states. This increases the separation between states and/or allows more states to be included within a given storage window. An implementation that is described is for a NAND type of flash EEPROM.

Abstract: A memory has defective locations in its user portion replaceable by redundant locations in a redundant portion. Data latches in the user and redundant portions allow data sensed from or to be written to a memory to be exchanged with a data bus. A defective location latching redundancy scheme assumes the column circuits including data latches for defective columns to be still useable. The data latches for the defective columns are used to buffer corresponding redundant data that are normally accessible from their data latches in the redundant portion. In this way both the user and redundant data are available from the user data latches, and streaming data into or out of the data bus is simplified and performance improved.

Abstract: In a USB device, virtual endpoint capability allows a number of physical endpoints in the device to support a larger number of data pipes at logical endpoints requested by the host. This is done by re-assigning physical endpoints to support the logical endpoint requested by the host. The logical endpoints and their corresponding data pipes may be served in a round robin scheme.

Abstract: The present invention is directed to methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects by allowing design rules on degradation to be included in the netlist. Once the hot-carrier circuit simulation is launched, the rules are checked and the reliability design rule violations are reported. The process can be performed on either the layout or schematic window. The design rule criteria can be any device parameter and can be expressed in absolute or relative terms. The criteria can be based on device type, model card name, instance geometry, or temperature. Additionally, values can be set prior to beginning the simulation.

Abstract: A method for detecting an anomaly on a top surface of a substrate comprises directing a first radiation beam having a first wavelength at the top surface of the substrate at a first angle measured from normal, and directing a second radiation beam having a second wavelength at the top surface of the substrate at a second angle measured from normal, wherein the second wavelength is not equal to the first wavelength. The method then comprises detecting scattered radiation from the first radiation beam and the second radiation beam to detect the presence of particles or COPs, and to differentiate between the two. Differences in the scattered radiation detected from the first radiation beam and from the second radiation beam provide the data needed to differentiate between particles and COPs.

Abstract: When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.

Abstract: The invention describes the method for regrouping data read from multi-sector pages inside a memory chip. As a result, garbage collection operation time greatly reduces and overall system performance increases. Architectural features include the ability to selectively transfer individual data sectors of a page between on-chip registers and the ability to realign data sectors within a register.

Abstract: An integrated non-volatile memory circuit is formed by first growing a thin dielectric layer on a semiconductor substrate surface, followed by depositing a layer of conductive material such as doped polysilicon on this dielectric layer, the conductive material then being separated into rows and columns of individual floating gates. Cell source and drain diffusions in the substrate are continuously-elongated across the rows. Field dielectric deposited between the rows of floating gates provides electrical isolation between the rows. Shallow trenches may be included between rows without interrupting the conductivity of the diffusions along their lengths. A deep dielectric filled trench is formed in the substrate between the array and peripheral circuits as electrical isolation. Various techniques are included that increase the field coupling area between the floating gates and a control gate.

Abstract: A method for reducing source line bias is accomplished by read/write circuits with features and techniques for multi-pass sensing. When a page of memory cells are being sensed in parallel, each pass helps to identify and shut down the memory cells with conduction current higher than a given demarcation current value. In particular, the identified memory cells are shut down after all sensing in the current pass have been completed. In this way the shutting down operation does not disturb the sensing operation. Sensing in subsequent passes will be less affected by source line bias since the total amount of current flow is significantly reduced by eliminating contributions from the higher current cells. In another aspect of sensing improvement, a reference sense amplifier is employed to control multiple sense amplifiers to reduce their dependence on power supply and environmental variations.

Abstract: Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

Abstract: A removable electronic circuit card has multiple modules connected to the card's bus in parallel so that each module can exchange commands and data independently with the host. According to a first aspect of the present invention, this achieved by a controller-to-controller interface whereby the modules can facilitate their interactions with the host. In a first set of embodiments, the modules are on a single card, while in a second set of embodiments the modules are distributed across multiple cards, where a first card attaches to the host and other cards attach to the first card rather than directly to the host. In all of these cases, the host sees the multiple modules as a single card having a single module. In a further aspect of the present invention, the card or cards are able to communicate with the host in more than one protocol.

Abstract: A system and method for coherent optical inspection are described. In one embodiment, an illuminating beam illuminates a sample, such as a semiconductor wafer, to generate a reflected beam. A reference beam then interferes with the reflected beam to generate an interference pattern at a detector, which records the interference pattern. The interference pattern may then be compared with a comparison image to determine differences between the interference pattern and the comparison image. According to another aspect, the phase difference between the reference beam and the reflected beam may be adjusted to enhance signal contrast. Another embodiment provides for using differential interference techniques to suppress a regular pattern in the sample.