Abstract: One or more embodiments, relate to a field effect transistor, comprising: a substrate; a gate stack disposed over the substrate, the gate stack comprising a gate electrode overlying a gate dielectric; and a sidewall spacer may be disposed over the substrate and laterally disposed from the gate stack, the spacer comprising a polysilicon material.
Type:
Grant
Filed:
August 12, 2008
Date of Patent:
May 25, 2010
Assignee:
Infineon Technologies AG
Inventors:
John Power, Mayk Roehrich, Martin Stiftinger, Robert Strenz
Abstract: In an embodiment, an integrated circuit or chip is supplied to its intended application and a measurement quantity representing the state of one or a plurality of electrical connections in the chip is determined within the application environment of the chip and, if the measurement quantity determined does not correspond to predefined criteria, a corresponding signal is output.
Abstract: One or more embodiments relate to a method of making a heterojunction bipolar transistor (HBT) structure. The method includes: forming a partially completed heterojunction bipolar transistor (HBT) structure where the partially completed heterojunction bipolar transistor (HBT) structure includes a silicon layer having an exposed surface and a nitride layer having an exposed surface. The method includes growing a first oxide on the silicon layer and etching the nitride layer using an etchant.
Abstract: Organopolysiloxane modified organic polymers are prepared by reacting organic polymers containing C-bonded hydroxyl groups with organopolysiloxanes containing Si-bonded hydroxyl groups and/or alkyl groups which are bonded to silicon via oxygen in the presence of water in excess of any formed during the reaction.
Type:
Grant
Filed:
February 27, 1981
Date of Patent:
January 11, 1983
Assignee:
Wacker-Chemie GmbH
Inventors:
Bernward Deubzer, Josef Esterbauer, Christian Solbrig, Volker Frey
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