Abstract: Apparatus for processing a substrate in a physical vapor deposition chamber is provided herein. In one embodiment, apparatus for processing a substrate in a physical vapor deposition chamber having a target disposed in a lid assembly and a grounded chamber wall includes a ground frame and a ground shield. The ground frame is configured to be insulatively coupled to the lid assembly and has an electrically conductive lower surface. The ground shield has an electrically conductive wall that is adjustably and electrically coupled to the conductive lower surface of the ground frame. The ground shield is configured to circumscribe the target and has an upper edge configured to provide a gap between the upper edge and a peripheral edge of the target when installed.

Abstract: A vacuum chamber having a gate valve including a chamber housing defining an internal vacuum region and first and second openings through the chamber housing and a gate valve secured to the chamber housing. The gate valve includes a sealing door located in the processing region and configured to seal the first opening in the chamber housing; a vertical actuator located outside the chamber housing; a one-sided horizontal actuator located within the processing region and connected to the sealing door; and a valve shaft extending through the second opening in the chamber housing and connecting the vertical actuator to the one-sided horizontal actuator.

Abstract: The present invention generally provides methods and apparatus for reducing noise in a detected electromagnetic wave used to telemeter data during a wellbore operation. In one embodiment, two surface antennae are placed on opposite sides of the wellbore and at the same distance from the wellbore. The signals from the two antennae are summed to reduce the noise in the electromagnetic signal transmitted from the electromagnetic downhole tool.

Abstract: Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

Abstract: A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Abstract: The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput. Embodiments of the present invention eliminate load cups from a polishing system, hence improve throughput by reducing system footprint and substrate hand off. One embodiment provides an apparatus for polishing a substrate. The apparatus comprises a platen having a polishing pad supported thereon, a carrier head configured to hold the substrate and press the substrate against the polishing pad, and a retaining ring adapted to be attached to and detached from the carrier head, wherein the retaining ring is configured to receive the substrate while positioned on the polishing pad and detached from the carrier head.

Abstract: Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.

Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

Abstract: Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

Abstract: A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.

Abstract: Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force as well as to oscillate the pad conditioner. Further means may be provided to vary the downward force along the length of the pad conditioner. In one embodiment, a plurality of actuators may be coupled to a top surface of the member and adapted to selectively provide an independently controllable force against the member to finely control the conditioning profile.

Abstract: A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

Abstract: Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.

Abstract: The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput and reduced foot print. One embodiment of the present invention provides an apparatus for polishing a substrate. The apparatus comprises a base, four polishing stations disposed on the base, two load cups disposed on the base and a carousel supported by the base. The carousel comprises six substrate heads and is rotatable about a carousel axis. Each of the six substrate heads is configured to align with any one of the four polishing stations and the two load cups.

Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.