Abstract: A BICMOS combined bit line load and write gate for a memory comprises first and second portions coupled to first and second bit lines of a bit line pair, the first and second portions each comprising first through sixth transistors. The first and second transistors are serially coupled from a power supply voltage terminal to form a CMOS inverter whose input terminal receives a local write signal and whose output terminal is coupled to the base of the fifth transistor. The third transistor has a drain coupled to the source of the second transistor, a gate for receiving the local write signal, and a source for receiving a data signal. The fourth transistor is serially coupled between the base of the fifth transistor and the source of the third transistor, with the local write signal coupled to the gate thereof. The fifth transistor has a collector coupled to the power supply voltage terminal, and an emitter coupled to a corresponding bit line.

Abstract: A binary magnitude comparator having a plurality of rows and a plurality of columns, including a most significant column and a least significant column. The binary magnitude comparator is not clocked and performs a comparison asynchronously in a shorter period of time than a clocked binary magnitude comparator of corresponding bit size. The binary magnitude comparator comprises a plurality of comparator cells forming a plurality of rows and columns. Each row corresponds to a register, and each column a bit position in that register. A comparison is begun by selecting one or more registers with a plurality of select signals coupled to comparator cells in the most significant column, and proceeds from the most significant column, to successively next most significant columns, and terminates when the comparison in the least significant column is complete.