Patents Represented by Attorney, Agent or Law Firm Peter A. Businger
  • Patent number: 4536229
    Abstract: Essentially cobalt-free alloys are disclosed having a coercive force which is greater than or equal to 40 oersteds and having a magnetic squareness which is greater than or equal to 0.6. Such alloys comprise Fe, Ni, and Mo, and their approximate compositions are specified by 16-30 weight percent Ni and 3-10 weight percent Mo, remainder essentially Fe. Disclosed alloys are useful in memory and security devices.
    Type: Grant
    Filed: November 8, 1983
    Date of Patent: August 20, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Sungho Jin, Thomas H. Tiefel
  • Patent number: 4529942
    Abstract: In the interest of increased efficiency and gain of free-electron amplifier devices, means are provided for retarding electromagnetic radiation in such devices. This permits an electron beam pulse to catch up with a pulse of electromagnetic radiation and thus to interact repeatedly with electromagnetic radiation. Retarding means may be implemented, e.g., as one or several waveguides having suitable diameter and length; alternatively, resonant filters consisting essentially of wire meshes can be used.
    Type: Grant
    Filed: January 29, 1982
    Date of Patent: July 16, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Chandra K. N. Patel, Earl D. Shaw
  • Patent number: 4529427
    Abstract: A method is disclosed for making an optical fiber by drawing a preform whose fabrication involves deposition of a glass on a substrate by means of a chemical reaction between gaseous reagents. According to the disclosed method, accurately controlled amounts of a gaseous reagent are produced by flash evaporating a metered flow of a liquid reagent. The disclosed method is of particular interest for the industrial production of optical fibers.
    Type: Grant
    Filed: January 5, 1979
    Date of Patent: July 16, 1985
    Assignee: AT&T Bell Laboratories
    Inventor: William G. French
  • Patent number: 4505548
    Abstract: A bistable liquid crystal twist cell is disclosed. The cell has at least two states which are stable in the presence of a single given holding voltage. The states may be switched from one to the other by short-term variation in the magnitude of the applied voltage.
    Type: Grant
    Filed: October 12, 1983
    Date of Patent: March 19, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Dwight W. Berreman, William R. Heffner
  • Patent number: 4498093
    Abstract: III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
    Type: Grant
    Filed: September 14, 1981
    Date of Patent: February 5, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Christopher L. Allyn, Peter G. Flahive, David E. Iglesias, Wolfgang O. W. Schlosser, Stuart H. Wemple
  • Patent number: 4482424
    Abstract: A method for lithographically fabricating devices is disclosed. In accordance with the method, a sacrificial coating material (SCM), e.g., a resist, mixed with a fluorescent material is deposited onto a substrate and then etched. SCM etching is monitored by subjecting the fluorescent material within the SCM to fluorescence-inducing energy, and detecting the resulting fluorescence. Because the fluorescent material is etched away as the SCM is etched, fluorescence intensity decreases as SCM thickness is reduced. Thus, SCM etch end point is accurately determined because etch end point corresponds to the point in time when the detected fluorescence ceases.
    Type: Grant
    Filed: May 6, 1983
    Date of Patent: November 13, 1984
    Assignee: AT&T Bell Laboratories
    Inventors: Abraham Katzir, Paul R. Kolodner
  • Patent number: 4475961
    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Mn alloy which contains Mn in a preferred amount in the range of 3-25 weight percent whose remanence B.sub.r (gauss) typically is greater than or equal to 20,000-500.times. (weight percent Mn), and whose squareness B.sub.r /B.sub.s typically is greater than 0.95.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.
    Type: Grant
    Filed: February 22, 1983
    Date of Patent: October 9, 1984
    Assignee: AT&T Bell Laboratories
    Inventor: Sungho Jin
  • Patent number: 4436648
    Abstract: ABS thermoplastic material is rendered electrically conducting by the inclusion of carbon particles. When manufactured by a process of dry mixing of ingredients, melting, and molding, the material has desirably low sheet resistance even at relatively low levels of carbon content (as is desirable in the interest of plastic formability). The new material may be used in the manufacture of electret microphones.
    Type: Grant
    Filed: December 22, 1980
    Date of Patent: March 13, 1984
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Sarwan K. Khanna, Satya P. Khanna
  • Patent number: 4428779
    Abstract: Cu-Ni-Sb alloys have been discovered having a two-phase or multiphase state at low levels of antimony, and alloys in such state have high strength, high ductility, and high electrical conductivity. Tensile strengths in the range of 80,000-160,000 psi have been achieved, and electrical conductivity in the range of 30-65 percent of the conductivity of copper.Alloys of the invention can be made by processing involving homogenizing, rapid cooling, cold working, and aging; for maximized electrical conductivity, dual combined steps of cold working and aging are beneficial.
    Type: Grant
    Filed: June 30, 1982
    Date of Patent: January 31, 1984
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: John T. Plewes, Robert W. Tomb
  • Patent number: 4427464
    Abstract: A method of liquid phase epitaxy is disclosed for growing a plurality of different layers on each of a plurality of semiconductor wafers during a single heating cycle. Each of a series of melts, each corresponding to a layer to be grown, is divided, in succession, into aliquant portions and a remainder portion. Each aliquant portion is contacted by one or more wafers, and epitaxial growth occurs as the temperature is lowered. Provision of a remainder portion enables a two-phase melt, and a wafer contacts only one distinct melt at a time.After a growth step, the next successive melt likewise is separated into aliquant portions and a remainder portion, the wafers are removed from the preceding melt chambers and placed in contact with the newly formed aliquant portions, and growth of another layer ensues from another drop in temperature. The process is repeated for each melt provided.Apparatus for carrying out the method also is described.
    Type: Grant
    Filed: December 31, 1981
    Date of Patent: January 24, 1984
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Bulusu V. Dutt
  • Patent number: 4420732
    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among known alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Cr-Mo alloy which comprises Cr in a preferred amount in the range of 6-26 weight percent and Mo in a preferred amount in the range of 1-12 weight percent. Preparation of alloys of the invention may be a treatment of annealing, deformation, and aging.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.
    Type: Grant
    Filed: January 18, 1982
    Date of Patent: December 13, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Sungho Jin
  • Patent number: 4419148
    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Ni or Fe-Ni-Mn alloy which contains Ni in a preferred amount in the range of 6-20 weight percent and Ni in an amount which is less than or equal to 8 weight percent. Remanence B.sub.r (gauss) is greater than or equal to 15,000 gauss; squareness B.sub.r /B.sub.s typically is greater than 0.95.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.
    Type: Grant
    Filed: February 23, 1982
    Date of Patent: December 6, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Sungho Jin
  • Patent number: 4419417
    Abstract: Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.
    Type: Grant
    Filed: November 9, 1981
    Date of Patent: December 6, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Roy C. Le Craw, Lars C. Luther, Terence J. Nelson
  • Patent number: 4415380
    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Mo-Ni alloy which comprises Mo in a preferred amount in the range of 2-26 weight percent and Ni in a preferred amount in the range of 0.5-15 weight percent.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.Preparation of alloys of the invention may be by a treatment of annealing and aging or deformation and aging.
    Type: Grant
    Filed: April 1, 1982
    Date of Patent: November 15, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Sungho Jin, Thomas H. Tiefel
  • Patent number: 4406712
    Abstract: Alloys comprising copper, nickel and tin, when appropriately processed, exhibit high levels of tensile strength and ductility. Processing has been by cold working and aging or, when cold working is impracticable, by aging of alloys which are modified by the addition of a refractory element.It has been discovered that, even without cold working and even in the absence of additives, strong and ductile Cu-Ni-Sn alloys can be produced when a body of the alloy is subjected to a characteristic heat treatment to develop an alpha plus essentially nonlamellar gamma structure. This is followed by cooling and aging at a temperature and for a time corresponding to a predominantly spinodal alpha-1 plus alpha-2 structure.Typical properties are a 0.01 percent offset yield strength of 128 Kpsi and an elongation to fracture of 5 percent in an alloy comprising 15 weight percent Ni, 8 weight percent Sn, and remainder essentially Cu.
    Type: Grant
    Filed: August 7, 1981
    Date of Patent: September 27, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Theodore J. Louzon
  • Patent number: 4401483
    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among known alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Cr-Mo alloy which comprises Cr in a preferred amount in the range of 6-26 weight percent and Mo in a preferred amount in the range of 1-12 weight percent. Preparation of alloys of the invention may be by a treatment of annealing, deformation, and aging.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.
    Type: Grant
    Filed: January 18, 1982
    Date of Patent: August 30, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Sungho Jin
  • Patent number: 4401482
    Abstract: Fe--Cr--Co alloys have found application in the manufacture of permanent magnets on account of magnetic properties such as, high coercive force, remanent magnetization, and energy product. A method is disclosed for producing magnetic articles comprising Fe, Cr, and Co from powders comprising elemental or pre-alloyed particles. A powder is mixed with an essentially noncarbonizing organic binder, compressed, heated to remove binder, sintered, and aged. Heating results in essentially complete removal of binder prior to sintering.Magnetic bodies produced according to the disclosed method typically comprise less than 1 weight percent of undesirable nonmagnetic phases and have a maximum energy product of at least 1 million gauss oersted.
    Type: Grant
    Filed: December 7, 1981
    Date of Patent: August 30, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Martin L. Green, Richard C. Sherwood
  • Patent number: 4400445
    Abstract: The manufacture of magnetic bubble devices typically involves a step of epitaxially depositing a layer of a garnet material on a substrate having suitable lattice parameters, e.g., layers of certain rare earth-iron garnets are conveniently deposited on a gallium-gadolinium garnet substrate. Deposition by liquid epitaxy has been preferred and, in particular, deposition from a melt comprising garnet materials in a PbO--B.sub.2 O.sub.3 flux.According to the invention, garnet layers are epitaxially grown from a melt comprising a PbO--V.sub.2 O.sub.5 flux. Growth from such melt has desirably slow kinetics, resulting in slow deposition as is beneficial especially for the growth of layers on an assembly of substrates. Additional benefits are ease of removal of liquid droplets remaining on a grown film upon removal from the melt, both by spinning and by rinsing.
    Type: Grant
    Filed: November 18, 1981
    Date of Patent: August 23, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: George W. Berkstresser, Stuart L. Blank
  • Patent number: 4391657
    Abstract: Niobium-aluminum superconducting wire and other shaped articles are made by heating a precursor body which comprises niobium, an auxiliary element which is more easily oxidizable than aluminum, and aluminum oxide, the aluminum oxide being supported by a surface or a matrix comprising niobium and the auxiliary element. Among suitable auxiliary elements are zirconium, hafnium, scandium, yttrium, and the nonmagnetic rare earths.
    Type: Grant
    Filed: July 17, 1981
    Date of Patent: July 5, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: William L. Feldmann, John M. Rowell, Paul H. Schmidt
  • Patent number: 4391656
    Abstract: To provide for an inexpensive magnet alloy, isotropic and nearly isotropic permanent magnet properties are developed in Fe-Mo-Ni alloys. Manufacture may be by a method which comprises steps of annealing, optional deforming by a limited amount, and aging.Typical magnetic properties of alloys of the invention are a coercive force in the range of 50-500 oersted, a magnetic remanence in the range of 7000-14000 gauss, and a magnetic squareness ratio of less than 0.9. Alloys of the invention are highly ductile even after plastic deformation, they are readily bonded to aluminum supports (as used, e.g., in the manufacture of twistor memories), and they are readily etched by etchants which leave aluminum unaffected.
    Type: Grant
    Filed: May 3, 1982
    Date of Patent: July 5, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Sungho Jin, Thomas H. Tiefel