Abstract: Nickel material comprising controlled amounts of hydrogen has low electrical contact resistance even after prolonged exposure to an oxidizing ambient. When used as a surface layer on an electrically conducting member, such material is suitable as a contact material and represents an inexpensive alternative to gold. And, when prepared in the form of microscopic flakes, such material is suitable for use in electrically conductive inks and adhesives.

Abstract: Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effectively serve to minimize interdiffusion during device manufacture without undue increase in electrical contact resistance during device operation.

Abstract: Chemical vapor deposition of an aluminum layer on a substrate is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

Abstract: In the interest of producing high-strength splice connections between silica-based glass fibers a method of using a tri-particle flow of gases for flame fusion is disclosed. An outer relatively high-velocity flow of oxygen surrounds an intermediate, lower-velocity flow of chlorine or oxygen which in turn surrounds a central flow of H.sub.2, D.sub.2, NH.sub.3, or ND.sub.3.Particularly high strengths are achieved when a central flow of hydrogen or deuterium and an intermediate flow of chlorine are used in such a fashion as to heat fiber ends to be spliced to temperatures of 500 degrees C. and beyond only after these ends have been enveloped by chlorine.

Abstract: Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

Abstract: A buried-heterostructure distributed feedback laser is described, including a grating structure at a surface of a nonplanar cladding layer. The grating structure can be made by transfer of a pattern by ion milling, the pattern being defined in an ion-beam resist layer, e.g., by direct-writing electron-beam exposure. Low-threshold, high-power lasers are obtained with a commercially favorable yield.

Abstract: An optical logic element in which energy absorption is approximately constant is described.

Abstract: Crystals of neodymium and praseodymium iron garnet materials have Faraday rotation which render such materials suitable for use, e.g., as antireciprocal components in optical devices and communications systems. These materials can be made by liquid-phase epitaxy on a substrate having suitable lattice parameters, deposition being carried out at relatively low melt temperatures.

Abstract: A structure having a sawtooth graded bandgap region between two layers having the same conductivity type is useful as a photodetector.

Abstract: Electrically conductive paths are produced on a polymeric substrate by laser writing, i.e., by tracing desired paths on the substrate by a laser beam. The resulting paths comprise electrically conductive carbon as produced by thermal decomposition of substrate surface material; the paths can serve; e.g., as electrical interconnections akin to printed circuitry on a wiring board. Optionally, the conductivity of paths can be enhanced by electroplating a suitable conductor metal or alloy onto the paths.

Abstract: Epitaxial layers of bismuth-containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, molybdenum oxide, and chromium trioxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.

Abstract: In the interest of reducing the effect on tensile strength of flame processing of a silica-based optical fiber waveguide, such processing is by a method in which a significant flow of oxygen surrounds a flame produced by combustion of hydrogen, deuterium, ammonia, or deuterated ammonia. Flame processing may be for purposes such as, e.g., fiber drawing, fiber fusing for the sake of lateral coupling, refractive index modification by the diffusion of dopants, and fiber splicing in the manufacture of long lengths of fiber. Even though there is no use of chlorine, at least 80 percent of spliced fibers have a tensile strength greater than or equal to 500 kpsi (3.45 GPa) as is desirable in optical fiber cable manufacture.

Abstract: Apparatus is described which is especially well suited for simultaneous molecular beam epitaxy of materials, such as silicon, on a plurality of substrates.

Abstract: In the interest of enhanced yield in the manufacture of "wafer-scale" integrated circuits an assembly of integrated circuit chips is made by placing chips on a substrate. Chips have beveled edges as produced by crystallographically anisotropic chemical etching, and the substrate has wells, grooves, or openings having sloping walls. Chips are positioned on the substrate by bringing sloping walls and beveled edges in juxtaposition, and circuitry on chips is connected to circuitry on the substrate.

Abstract: Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.

Abstract: Electrical signals are produced by a pressure-responsive device, such signals being indicative of the position of locally applied pressure. The device comprises a position sensor assembly which comprises a composite layer medium including electrically conductive magnetic particles in a nonconductive matrix material. The particles are aligned into chains extending across the thickness of the layer, and chains include a non-conductive gap which is bridged upon application of sufficient pressure. The medium is sandwiched between sheet electrodes, and the resulting assembly may be transparent as is advantageous in writing pad and touch-sensitive screen applications. The pressure-responsive device is suitable, e.g., as an input device in graphics information systems, in combination with transmission and display facilities.

Abstract: Epitaxial layers of semiconductor materials such as, e.g., III-V and II-VI materials are deposited on a substrate under high-vacuum conditions. Molecules of a compound of a constituent of such material travel essentially line-of-sight towards the substrate admixed to a carrier gas such as, e.g., hydrogen. For III-V layers the use of compounds, such as, e.g., trimethyl- and triethylgallium, trimethyl- and triethylindium, triethylphosphine, and trimethylarsine is advantageous and economical in the manufacture of electronic and opto-electronic devices.

Abstract: A bistable nematic liquid crystal display cell is electrically switched between topologically equivalent, asymmetric horizontal states. The cell includes upper and lower parallel substrates, upper and lower topographically textured tilt alignment surfaces on the corresponding substrates, and nematic liquid crystal material between the substrates. In an active region of the cell, the tilt alignment surfaces form an unequal reverse tilt boundary condition. In an isolation region surrounding the active region of the cell, the tilt alignment surfaces are formed to avoid the reverse tilt boundary condition.

Abstract: A bistable nematic liquid crystal display cell is switched between topologically equivalent, asymmetric horizontal states. Switching is initiated by application of a directional, symmetry breaking field such as a transverse magnetic field. An electric potential is then applied across the cell to complete the switching cycle and maintain the state. The cell includes upper and lower parallel substrates, upper and lower topographically textured tilt alignment surfaces on the corresponding substrates, and nematic liquid crystal material between the substrates. In an active region of the cell, the tilt alignment surfaces form an equal reverse tilt boundary condition. In an isolation region surrounding the active region of the cell, the tilt alignment surfaces form a parallel tilt boundary condition.

Abstract: Epitaxial layers of bismuth containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, and molybdenum oxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.