Abstract: A process for etching aluminum from a substrate, where portions of the aluminum are protected by a resist material, is described. The substrate is placed into a chamber and a process gas comprising HCl, Cl-containing etchant and N.sub.2 is introduced in the chamber. A plasma is generated in the chamber to generate from the process gas an etch gas that etches aluminum from the substrate at fast rates, with good selectivity, reduced profile microloading, and substantially only anisotropic etching.