Abstract: A semiconductor structure includes raised source and drain regions, where the raised source and drain regions are facet free and unconstrained to have a shape conforming to a same crystallographic axes with respect to each other.
Type:
Grant
Filed:
June 7, 2001
Date of Patent:
April 29, 2003
Assignee:
International Business Machines Corporation
Inventors:
Cyril Cabral, Jr., Kevin Kok Chan, Guy Moshe Cohen, Kathryn Wilder Guarini, Christian Lavoie, Ronnen Andrew Roy, Paul Michael Solomon