Abstract: A packaged semiconductor circuit for use in processing digital and RF signals. The packaged semiconductor circuit includes a package structure having a first side that includes a metallization layer. The metallization layer has a first part at about a center of the first side and a second part that surrounds the center. The circuit further includes a semiconductor die that is attached to the package structure at about the first part of the metallization layer. The semiconductor die has an interconnection side including an array of bumps that are configured to make electrical connection to selected ones of a first plurality of metallization traces that are defined in the first part of the metallization layer of the package structure. The circuit also includes a spiral inductor trace that is formed from the metallization layer of the package structure and is defined in the first part of the metallization layer.