Abstract: A method for extracting a watermark signal contained in a watermarked digital image sequence having two or more frames, including the steps of estimating correspondences between one or more pairs of frames in the watermarked digital image sequence; computing a displaced frame difference for one or more frames in the watermarked digital image sequence using the correspondences; and extracting the watermark signal from one or more displaced frame differences.

Abstract: A method of making a color filter array on a first substrate comprising the steps of: providing at least one transferable colorant layer on a second substrate and positioning such transferable layers in transferable relationship with but spaced a distance from the first substrate; and heating the second substrate sufficiently to simultaneously transfer the colorant materials from the heat transferable colorant layers to the first substrate. An etch process is used to form openings in the first colorant, into which subsequent colorants are deposited.

Abstract: A method for creating an inkjet chamber. The method comprises the steps of firstly providing a substrate having a nozzle opening and secondly etching the substrate through the nozzle opening by alternating between anisotropic and isotropic etching processes for forming a chamber having a shape approximating a cylinder by using multiple hemispheric etches.

Abstract: An oversaturation protection circuit is provided within a CMOS image sensor. A detector is arranged to monitor an output column line that is associated with a pixel to determine whether the pixel is oversaturated after being reset. If the pixel is oversaturated after being reset, the level of the pixel is determined by measuring the difference between a first reference voltage and the integrated voltage of the pixel. If the pixel is not oversaturated after being reset, the level of the pixel is determined by measuring the difference between the voltage of the column line shortly after reset and the integrated voltage of the pixel. A detector may be arranged to provide the result of the comparison of the associated pixel to be used with other pixels within the pixel column that are adjacent to the associated pixel.

Abstract: A docking station assembly for transmitting digital images, the docking station assembly comprises a housing for forming an enclosure for the docking station assembly and the housing includes an insert-receiving portion for receiving any of a plurality of removable and replaceable inserts; and a removable and replaceable insert having a docking mating portion which mates with the insert-receiving portion, and having a camera mating portion having a shape of a portion of a particular digital camera.

Abstract: A method for authenticating a printed or scanned embedded image is disclosed that utilizes a prediction of the effect of a print or scanning process on the embedded message based upon characteristics of the printer or scanner. These values are measured directly at the time of authentication and compared to the predicted. Based on the comparison a decision is made regarding authenticity.

Abstract: A pixel design for CMOS image sensors that has a high frame rate potential and, therefore, provides motion capture capabilities. The pixel is designed for global electronic shuttering so every pixel is exposed simultaneously to images incident upon the pixel array plane. The present invention has the advantages of: (1) Allowing the accommodation of changes in the pixel output groupings for different monochrome output format or CFA patterns with only changes in metal routing layers; (2) allowing true electronic shuttering to image moving scene with all the pixels having the same capture time windows; and (3) providing a symmetric global shutter gate and transfer gate to minimize pixel related fixed pattern noise. The pixel architecture provides for a CMOS based, active pixel image sensor comprising an array of pixels formed in rows and columns, with each of the pixels containing at least one active circuit element.

Abstract: An image sensor for capturing an image includes a photosensitive area for receiving incident light; a substance placed covering a portion of the photosensitive area which substance includes a first index of refraction; and a plurality of electrodes positioned adjacent the substance having a dielectric placed between a portion of the electrodes, which dielectric includes a second index of refraction lower than the first index of refraction.

Abstract: The photosensitive volume of a pixel is extended beyond the photodiode region, which allows the pixel sensitivity to be relatively independent of the photodiode region. In an example embodiment, the photosensitive volume can be maximized by using a CMOS process to remove heavily doped material (e.g., as from in a P well) from the photodiode and to form a pn junction on lightly doped material (e.g., p-type epitaxial layer). The photosensitive volume is thus defined by the larger area of the lightly doped material rather than being merely restricted to the photodiode region. Based on the requirements of signal-to-noise ratios (SNR) and desired dynamic range (DR), a minimized size photodiode (with optimized area and perimeter) can be designed to maximize photo conversion gain, which maximizes sensitivity.

Abstract: An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: An automatic exposure system is arranged to dynamically adjust the exposure time and gain of a pixel array in an imaging system. A selected group of pixels from the pixel array are evaluated while the pixel array is exposed to light that is reflected from a scene. The signal levels associated with the selected pixels are compared to a dynamically adjusted exposure threshold level, while the current exposure time is compared to a dynamic adjusted exposure time limit. The exposure threshold level and exposure time limit are selected using a method that is optimized for lower noise and less blur in the resulting image. The optimization method includes an optimal exposure method, an extrapolative method, an iterative method, and an alternative iterative method. The optimization methods are arranged to find an optimum balance between exposure time and gain such that noise and motion blur are minimized in the resulting image.

Abstract: An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: CMOS imagers can possess higher levels of imager noise than their predecessors, CCDs. This noise can be of the form of temporal variation and fixed pattern. The fixed pattern component of this noise can be removed, which is known already in the art. The invention in this disclosure is that proper correction can be developed for all imager conditions (imager integration time and imager temperature) using a single FPN (fixed pattern noise) dark map, a single FPN PRNU (pixel response nonuniformity) map, imager integration time and imager temperature. Without this invention, a dark frame capture and a flat field capture (integrating sphere), are required before every image capture, a practical impossibility in typical picture taking.

Abstract: An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.

Abstract: The present invention provides a method and apparatus for calibrating a black level in an imager to reduce flicker noise. A first and a second range is set. The first range corresponds to a range that is larger than a noise level at a highest PGA gain. The second range corresponds to a range that is smaller than a level which reduces an ADC dynamic range too much due to a large black level. The ranges may be adjusted to changes in an imager in real time. When the black level is within the second range a determination is made as to whether the black level has been calibrated before. When it has, the DAC output is held constant. Otherwise the DAC code is adjusted such that the black level is moved toward the first range. A small step size is used in adjusting the DAC code in order to reduce flicker. Step sizes may be adjusted according to the black level in relation to the ranges. A small step size is used when the black level is within the second range.

Abstract: An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and a connection to the well; wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.

Abstract: A docking station assembly for transmitting digital images, the docking station assembly comprises a housing for forming an enclosure for the docking station assembly and the housing includes an insert-receiving portion for receiving any of a plurality of removable and replaceable inserts; and a removable and replaceable insert having a docking mating portion which mates with the insert-receiving portion, and having a camera mating portion having a shape of a portion of a particular digital camera.

Abstract: An imaging cell and a method of forming the imaging cell are disclosed. The imaging cell includes a first transistor that has source, a drain, and a gate, and a second transistor that has a source, a drain, and a gate connected to the source of the first transistor. In addition, the cell has a photodiode that is partially formed over the source of the second transistor.