Abstract: A pair of narrow channel IGFET devices having separate insulated gate electrode structures formed over narrow channel regions of a substrate flanking a central enhancement region. Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.

Abstract: Disclosed is a process for forming self-aligned all n.sup.+ -doped polysilicon gates and interconnections in CMOS integrated circuits. Polysilicon is formed into the n-FET gate, a barrier for the p-FET region and the interconnect pattern. Then, arsenosilicate glass (ASG) is formed over the interconnect and the p-FET gate and N-FET active regions. The p-FET gate is etched using the ASG as a mask. The device is heated driving in impurities from the ASG to n.sup.+ dope the polysilicon and form the n-FET source and drain. Then, boron is implanted in the p-FET source and drain regions.

Abstract: Apparatus and methods for end point detection during the plasma etching of integrated circuit wafers. Etching is conducted in a chamber subjected to the vacuum of a pump drawing at a constant volumetric gas flow rate. The etchant gases entering the chamber are regulated by a controller responsive to a feedback loop sensing pressures within the chamber. Changes in the chamber's chemical composition, which occur in time proximity to the end point of etching, affect the pressure and are detected as variations in the gas flow rates. Empirical results confirm the distinctiveness and repeatability which characterize the flow variations at the end point of etching.

Abstract: A method for making an FET comprising as many as three parallel channels having different threshold voltages. The two outer channels can have very low W/L ratios and resulting low drain-to-source currents. In one embodiment, the FET has a central enhancement channel flanked by low W/L ratio, low current, depletion channels. This FET is fabricated by (1) forming on the field oxide a photoresist mask having a relatively narrow aperture; (2) overetching the field oxide beneath the photoresist mask aperture to form a relatively wide aperture in the field oxide, leaving a photoresist overhang; (3) implanting the substrate through the relatively narrow photoresist mask aperture to provide an enhancement section of the channel region; (4) removing the photoresist mask; and (5) depletion implanting the substrate through the relatively wide field oxide aperture. The gate structure is formed over the combined enhancement and depletion channels and a source and a drain span the ends of the channels.

Abstract: An improvement of the prior art method of processing large scale integrated (LSI) semiconductors is disclosed, wherein an etching procedure, which was previously performed as the final processing step, is now done at an earlier stage to preclude damage to the surface of the wafer on which the active devices are formed. In the prior art method of fabricating an active device on a semiconductor wafer, an undesirable layer of field oxide manifests itself on the reverse side when the field oxide is grown on the obverse or principal side of the wafer. The prior processing philosophy was to allow the oxide layer to remain on the wafer until after the processing was completed and, as a final step, the undesired oxide coating was removed. This was done by carefully placing the wafer in a pool of etchant so that only the reverse side is etched.

Abstract: A plasma discharge display device including at least one channel defined between opposing walls and containing an ionizable medium. Electrodes are employed for the application of potential differences whereby the medium will emit light proximate the electrodes. The electrodes include first and second AC electrodes on opposite wall surfaces, and third and fourth electrodes for developing a DC discharge in the vicinity of the first and second AC electrodes. The channel is divided into individual cells by means of insulating walls, and the DC discharge serves to prime individual cells, this discharge being developed at succeeding cells. The potential differences achieved by the AC electrodes across a given cell are selectively imparted whereby a primed cell can be caused to emit light. Thereafter, continued operation of the AC electrodes will maintain the light emission in the selected cells to provide a continuous display.

Abstract: A method of providing improved adherence of photoresist to a silicon nitride layer on a semiconductor wafer by first preparing a heated solution of trichlorophenylsilane, immersing the nitride coated wafer in the trichlorophenylsilane solution, drying and baking the wafer prior to the application of the photoresist.

Abstract: A dispenser for magnetizable articles such as pins or paper clips. The dispenser has inner and outer concentric, slotted cylinders, the first cylinder being rotatable within the outer cylinder for dispensing articles through the slots. A pair of spaced magnets establishes a magnetic field which intersects the path of the dispensed articles for suspending the articles in the field without the aid of mechanical supports.

Abstract: Apparatus for uniformly applying toner-release lubricant to, and for cleaning, heated fusing rolls used in copying or reproduction machines. The apparatus comprises a lubricant-dispensing roll containing an internal supply of lubricant; an applicator roll for transferring lubricant from the dispenser roll to the fuser roll and for wiping the fuser roll; and a spreader roll for evenly distributing the lubricant on the applicator roll prior to the completion of transfer to the fuser roll. The dispenser roll is designed to (1) dispense lubricant uniformly and substantially continuously over approximately 270.degree. of each revolution, regardless of the oil level therein, and (2) preclude the dispensing of lubricant when not in use.

Abstract: A continuously variable anamorphic lens containing two sets of four elements between which is placed two achromatized prisms. The anamorphic magnification is varied by the tilting of the prisms.

Abstract: A toothbrush comprising a handle unit and a detachable brush. The handle contains a manually controlled, spring latching mechanism for retaining and ejecting the brush. The handle also contains a detachable storage section for capsules or other forms of toothpaste, toothpowder, etc.