Abstract: A method and apparatus for compensating for tunneling leakage current through a first capacitor includes: an operational amplifier, connected in a negative feedback configuration; a first compensation transistor; a second compensation transistor; and a compensation capacitor. The compensation capacitor is chosen so that the ratio of the area of the compensation capacitor divided by the area of the first capacitor is an area ratio “AR”. The operational amplifier sets the gate voltage of the compensation capacitor to be the same as the gate voltage of the first capacitor. The ratio of the size of the second compensation transistor divided by the size of the second compensation transistor is also the area ration “AR”.

Abstract: A method for providing low power MOS devices that include resistive paths specifically designed to provide a specified resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.