Abstract: There is provided a cochlear implant for improving the hearing ability of a patient suffered from hearing impairment comprising an internal receiving unit implanted into the body, which comprises a receiving part for receiving external signal, an active electrode and a reference electrode, characterized in that the active electrode is constructed with a single electrode wire having different thickness in at least two different regions. The active electrode of the internal receiving unit is inserted into a space formed at between the mastoid bone and the ear canal skin and end of the active electrode is inserted into the scala tympani of the cochlea and directly stimulates spiral ganglion. The cochlear implant provides easier implantation into the body and improved hearing ability at a lower cost.

Abstract: A method of fabricating a transistor is provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.

Abstract: An apparatus for forming a thin film includes: a chamber; a susceptor in the chamber; a gas injector over the susceptor, the gas injector having a plurality of injection holes; a shaft connected to the gas injector, the shaft having a flow path connected to the plurality of injection holes; and an evaporation source evaporating source materials and supplying evaporated source materials to the gas injector.

Abstract: Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.

Abstract: A substrate-treating apparatus includes: a plurality of modules disposed along a first direction, each of the plurality of modules having an inner space for containing a substrate; a transfer unit transferring the substrate among the plurality of modules, the transfer unit including at least one track disposed along the first direction and at least one movable transfer chamber moving along the at least one track; and a gate valve fixed to each of the plurality of modules and combined with the at least one movable transfer chamber. The at least one movable transfer chamber is isolated from an exterior atmosphere while moving.

Abstract: A field emission display device (FED) is provided. The FED includes a first substrate, a phosphor layer being in contact with the first substrate, and an anode electrode on the phosphor layer. The FED further includes a second substrate facing the first substrate and including a cathode electrode and an emitter disposed toward the anode electrode.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H2O and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.

Abstract: The present invention relates to a diamond tool and a method of manufacturing the same, wherein multiple abrasive layers are formed through a brazing or electroplating method, thereby improving the performance and service life of the tool. According to the method of the present invention, a plurality of concave portions are formed in a surface of the shank. A bonding paste is coated into the concave portions and abrasives are dispersed in the bonding paste to thereby form a lower abrasive layer. Again, a bonding material is coated on the lower abrasive layer and abrasives are dispersed in the bonding material to thereby form an upper abrasive layer. Then, a heat treatment is executed to fusion-bond the bonding material and abrasives onto the surface of the shank.

Abstract: A method of forming an epitaxial layer on a silicon substrate includes (a) providing a silicon substrate; (b) performing a wet-cleaning process onto the silicon substrate; (c) performing a first plasma cleaning process onto the wet-cleaned silicon substrate by providing a chlorine (Cl2) gas and an argon (Ar) gas; and (d) forming an epitaxial growth film on the silicon substrate after the (c) step.

Abstract: Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent electrode on a light-transmissive substrate, patterning the transparent electrode by removing a portion of the transparent electrode, and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process. In accordance with the method, the insulating protective layer is formed in the edge region of the patterned transparent electrode through the printing process so that an apparatus and method for manufacturing the insulating protective layer can be simplified, resulting in a decrease in manufacturing cost.

Abstract: The present invention relates to an image sensor camera module and a method of manufacturing the same. An image sensor camera module according to the present invention includes a lens; a lens housing having the lens mounted thereto; an image sensor package adhering to a portion of an inside of the lens housing; and a protruding portion for maintaining a gap between the lens and the image sensor package, wherein the image sensor package adheres to the lens housing at an outside of the protruding portion. According to the present invention, since a lens barrel is not used and a focus adjusting process is not performed, the process simplification and automation process can be achieved, thereby saving a manufacturing cost and obtaining uniform focus quality. Further, it is possible to prevent an image defect from being generated by foreign substances, thereby improving a yield.

Abstract: Disclosed is a cabin tent frame. The cabin tent frame includes a housing 20 having an insertion portion 23, an inserting slot 22 and an engaging slot 22b, a slider 10 slidably coupled with the lower portion of the housing 20, a fixing unit 30 elastically supported in the slider 10, an upper connecting pole 50 having an engaging piece 52 and a connecting bar 51, a cover 40 coupled to the upper portion of the housing 20, and a connector 53, one end of which is hingedly connected to the upper connecting pole 50 and the other end of which is hingedly connected to the slider 10. Therefore, with some embodiments the present invention, the rotational bearing capacity for the engaging piece 52 can be improved when the upper connecting pole 50 rotates, and at the same time damage to the engaging piece 52 can be substantially reduced.

Abstract: A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: The present invention relates to a portable and compact umbrella capable of being folded compactly without exposing umbrella ribs and umbrella cloth thereby being easily carried and stored. A portable and compact umbrella according to the present invention includes an extendable umbrella stick extended and retracted to change its length, wherein the extendable umbrella stick has a sheltering means provided at one side thereof and a fixing protrusion provided at the other side thereof; and a handle member having both ends communicating with each other and a receiving space defined therein, wherein the receiving space is partitioned by a cylindrical winding unit, the winding unit has an inner space formed inside thereof so that the extendable umbrella stick is retracted and received in the inner space, and the winding unit has an outer space formed outside thereof so that the sheltering means is wound around the winding unit and received in the outer space.

Abstract: The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.

Abstract: A transistor and a method of fabricating the same are provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.

Abstract: An apparatus includes: a process chamber for treating a substrate; a susceptor in the process chamber; a supporting frame over the susceptor; and at least one wire connected to the supporting frame.