Patents Represented by Attorney R. A. Hays

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  • Semiconductor device having reduced leakage current
    Patent number: 4122483
    Abstract: A semiconductor mesa device having reduced leakage current comprises a moat substantially completely filled with a passivating material. A layer of conductive material overlies the passivating material and is spaced apart from the adjacent semiconductor material. Such a structure is particularly advantageous for use in low current devices.
    Type: Grant
    Filed: September 30, 1977
    Date of Patent: October 24, 1978
    Assignee: RCA Corporation
    Inventor: William Hulstrunk
  • Method of testing semiconductor devices
    Patent number: 4114096
    Abstract: A method of testing semiconductor devices at low temperatures comprises the steps of first directing a relatively cold fluid upon the device for a time long enough to reduce the temperature thereof below the temperature at which it is to be tested, then internally heating the device to the test temperature and then performing a test at the testing temperature.
    Type: Grant
    Filed: April 25, 1977
    Date of Patent: September 12, 1978
    Assignee: RCA Corporation
    Inventor: Jack Joseph Chinery
  • Method of forming a curved implanted region in a semiconductor body
    Patent number: 4113516
    Abstract: A method is disclosed whereby a region having a varying conductivity profile and depth is formed in a body of semiconductor material. The method includes the step of implanting conductivity modifiers beneath a curved surface of the body. Such a region, fabricated by the present method, is particularly useful as one element of a semi-conductor device.
    Type: Grant
    Filed: January 28, 1977
    Date of Patent: September 12, 1978
    Assignee: RCA Corporation
    Inventors: Samuel Ponczak, John Aaron Olmstead
  • Machine for changing the spacing of a plurality of wafers
    Patent number: 4108323
    Abstract: A machine for changing the spacing of a plurality of wafers comprises a plurality of wafer receiving surfaces initially having a first spacing associated therewith. The wafer receiving surfaces cooperatively engage with means which, when activated, move the plurality of wafer receiving surfaces so that they have a second spacing associated therewith.
    Type: Grant
    Filed: September 28, 1977
    Date of Patent: August 22, 1978
    Assignee: RCA Corporation
    Inventors: Robert Charles Shambelan, Charles Wesley Lindsley
  • Machine for straightening the wire leads of a device
    Patent number: 4106532
    Abstract: A machine for straightening a wire lead or leads of a device comprises first and second opposing jaws affixed to a base. The first jaw and second jaw, when meshed, exert lateral straightening forces on the leads, and a slot disposed near the base of the leads is provided to prevent the fracture of the leads during the straightening operation and this slot also aligns the leads when there are more than one.
    Type: Grant
    Filed: June 6, 1977
    Date of Patent: August 15, 1978
    Assignee: RCA Corporation
    Inventors: Nicholas Francis Gubitose, Robert Arthur James
  • Chuck for use in the testing of semiconductor wafers
    Patent number: 4104589
    Abstract: A chuck for use in the testing of semiconductor wafers comprising first and second pluralities of electrically conductive members alternately arranged to provide a wafer receiving surface. The members are substantially completely electrically isolated from each other. Electric power leads and measurement sensing leads are provided to the first plurality of conductive members and the second plurality of conductive members respectively.
    Type: Grant
    Filed: October 7, 1976
    Date of Patent: August 1, 1978
    Assignee: RCA Corporation
    Inventors: Robert Lee Baker, Calvin Michael Mahoski, John David Partilla, Harold Robert Ronan, Jr.
  • Method of fabricating a semiconductor device
    Patent number: 4099997
    Abstract: A method of fabricating a semiconductor device having a one type conductivity portion substantially surrounded by a second type conductivity portion is disclosed. The method involves selectively diffusing different impurities having the same conductivity inducing effect. The disclosed method is particularly adaptable to forming a plurality of devices in a relatively thick semiconductor wafer.
    Type: Grant
    Filed: June 21, 1976
    Date of Patent: July 11, 1978
    Assignee: RCA Corporation
    Inventor: Wojciech Rosnowski
  • Semiconductor device having symmetrical current distribution
    Patent number: 4091409
    Abstract: A semicondutor device has an electrode with a configuration having a trunk portion and at least one comb-like portion. The comb-like portion has a back with ends and a plurality of conductive fingers extending therefrom. The trunk portion has a segment which is substantially parallel to the back of the comb-like portion. The trunk portion contacts the comb-like portion at a point intermediate the ends of the back.
    Type: Grant
    Filed: December 27, 1976
    Date of Patent: May 23, 1978
    Assignee: RCA Corporation
    Inventor: Carl Franklin Wheatley, Jr.
  • Transistor having improved junction breakdown protection integrated therein
    Patent number: 4071852
    Abstract: An improved integrated transistor device has reverse bias breakdown protection for the base-collector junction. The base-collector junction is protected by means of a diode region providing a punchthrough protective mode of operation. The configuration disclosed provides a device which has comparatively stable and relatively high energy junctions therein.
    Type: Grant
    Filed: January 10, 1977
    Date of Patent: January 31, 1978
    Assignee: RCA Corporation
    Inventor: Peter Joseph Kannam
  • Method for cracking brittle material
    Patent number: 4068788
    Abstract: A machine for separating a sheet of brittle material, for example a semiconductor wafer, into a plurality of pellets is disclosed. The pellets are defined by a plurality of intersecting scribed lines on the sheet. The machine includes a member for applying a shear force to an edge of the sheet whereby the maximum bending moment is applied at a preselected scribe line. The machine is particularly applicable for use with those semiconductor wafers which have a solder coating on both sides.
    Type: Grant
    Filed: September 29, 1975
    Date of Patent: January 17, 1978
    Assignee: RCA Corporation
    Inventors: Nicholas Francis Gubitose, Leonard Gawelko, Robert Joseph Satriano
  • Method of fabricating a semiconductor device
    Patent number: 4066485
    Abstract: A method of fabricating a semiconductor device comprises steps for forming recesses which can be used in the subsequent visual alignment of photomasks. The novel recess forming steps are so linked with a conventional processing step that the total number of steps required for the formation of the recesses is reduced. The present method is particularly adaptable to the fabrication of unisurface silicon controlled rectifiers wherein a doped isolation-type grid is formed to define each device.
    Type: Grant
    Filed: January 21, 1977
    Date of Patent: January 3, 1978
    Assignee: RCA Corporation
    Inventors: Wojciech Rosnowski, Richard Denning
  • Semiconductor thyristor devices having breakover protection
    Patent number: 4063277
    Abstract: Semiconductor thyristor devices with means, inherent in the structure thereof, for protecting the devices against damage due to breakover. The means requires, in a semiconductor controlled rectifier device, for example, that the active gate region have a comparatively smaller total charge than the adjacent base layer separating the active gate region from the anode layer.
    Type: Grant
    Filed: May 28, 1976
    Date of Patent: December 13, 1977
    Assignee: RCA Corporation
    Inventor: Kenneth Herbert Gooen
  • Gate turn off semiconductor rectifiers
    Patent number: 4062032
    Abstract: In semiconductor controlled rectifiers which can be of otherwise conventional design and configuration, a layer of relatively high resistivity material is disposed between the base region to which the gate electrode is connected and the otherwise immediately adjacent emitter region.
    Type: Grant
    Filed: May 27, 1975
    Date of Patent: December 6, 1977
    Assignee: RCA Corporation
    Inventor: John Manning Savidge Neilson
  • Method of selective aluminum diffusion
    Patent number: 4050967
    Abstract: A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion.
    Type: Grant
    Filed: December 9, 1976
    Date of Patent: September 27, 1977
    Assignee: RCA Corporation
    Inventors: Wojciech Rosnowski, Samuel Ponczak
  • High voltage semiconductor device having a novel edge contour
    Patent number: 4047196
    Abstract: A high voltage semiconductor device structure comprises a novel edge contour which directly contributes to increased voltage handling capability. Such a structure may further comprise a collector region shaped in coordination with the edge contour to provide a device having higher voltage capability.
    Type: Grant
    Filed: August 24, 1976
    Date of Patent: September 6, 1977
    Assignee: RCA Corporation
    Inventors: Joseph Paul White, Peter Joseph Kannam
  • Package for semiconductor components
    Patent number: 4037267
    Abstract: A novel package for semiconductor components is disclosed. The package eliminates the need for covers or plugs at both ends of a hollow body wherein the components are placed. The novel package is easily adapted to provide anti-static protection for components susceptible to damage from electrostatic discharges across the terminals thereof.
    Type: Grant
    Filed: May 24, 1976
    Date of Patent: July 19, 1977
    Assignee: RCA Corporation
    Inventor: Thaddeus William Kisor
  • Pressure sensitive field effect device
    Patent number: 4035822
    Abstract: A pressure sensitive field effect semiconductor device which is one element of an integrated array is disclosed. The device employs a layer of elastomer material located substantially between the gate and the current carrying channel, to effectuate the conversion of a longitudinal pressure variation to an electrical variation. The device may inherently include amplification of the electrical variation. One use for the device is in an acoustic wave detector array.
    Type: Grant
    Filed: March 14, 1975
    Date of Patent: July 12, 1977
    Assignee: RCA Corporation
    Inventor: David Herman Raphael Vilkomerson
  • Semiconductor integrated circuit device
    Patent number: 4035828
    Abstract: A semiconductor integrated circuit device which may be utilized as a Darlington circuit having an input stage and an output stage is disclosed. The Darlington may be characterized as having an increased isolation between the input stage and the output stage.
    Type: Grant
    Filed: May 21, 1976
    Date of Patent: July 12, 1977
    Assignee: RCA Corporation
    Inventors: Willem Gerard Einthoven, Anthony Joseph Caravaggio, Albert Alexander Todd
  • Method of preparing portions of a semiconductor wafer surface for further processing
    Patent number: 4035226
    Abstract: A method for producing a pattern on a semiconductor wafer during the fabrication of semiconductor devices, including integrated circuits is disclosed. A master is pressed into a layer of moldable material which is on the wafer surface to define a pattern of at least one relatively thin region and relatively thick regions therein with a high degree of definition. Thereafter the whole layer is treated, for example, to remove, by etching for example, a relatively thin region to expose a portion of the wafer surface, the relatively thick regions remaining on the wafer surface.
    Type: Grant
    Filed: April 14, 1975
    Date of Patent: July 12, 1977
    Assignee: RCA Corporation
    Inventors: Arnold Stanley Farber, Jack Hilibrand
  • Thermally ballasted semiconductor device
    Patent number: 4035827
    Abstract: A semiconductor device comprising a plurality of cells is disclosed. Each cell contains at least one bi-polar transistor and a diode serially connected to the base of the transistor therein. Each cell is connected in parallel relation with each other cell. The diode in each cell is located in close proximity to the transistor therein so that the thermal gradient therebetween is small.
    Type: Grant
    Filed: April 29, 1976
    Date of Patent: July 12, 1977
    Assignee: RCA Corporation
    Inventor: Carl Franklin Wheatley, Jr.