Abstract: A laser module uses series connected thermoelectric coolers to maintain lasers at the proper operating temperature. A variable resistance associated with the thermoelectric cooler is adjusted to maintain the current through the cooler at the proper value.

Abstract: Self-aligned contacts are formed to regions between closely spaced features by a method which uses differential etch rates between first and second dielectrics deposited over the closely spaced features.

Abstract: Oxides of tantalum and niobium are selectively etched using patterned silicon oxide deposited by a low-temperature chemical vapor deposition as a mask and a sulfate flux to selectively remove exposed portions of the tantalum or niobium oxide substrate.

Abstract: When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to dielectrics such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer- such areas typically including the backside and the edge of the wafer, and clip marks on the face of the wafer. The invention prevents flaking by processing including: forming an adhesive or glue layer on the dielectric, forming a metal layer, forming a protective layer on metal on the glue layer, and etching to remove metal not covered by the protective layer.

Abstract: Substrate-supported optical device structures such as, e.g. quantum-well infrared detectors/detector arrays are provided with a grating for optical coupling. A binary, reflection grating is designed so that nh is approximately equal to .lambda./4 where n is the refractive index of the grating, h is the thickness of the grating, and .lambda. is a wavelength of interest.

Abstract: A light emitting device uses a vertical cavity surface emitting laser having a voltage controlled mirror which is used, for example, to turn the laser ON and OFF by varying the reflectivity of one mirror forming the laser cavity.

Abstract: A semiconductor distributed feedback laser having a grating with .lambda./4 phase shift which is produced by moving the left and right sections of the grating with respect to each other in a direction perpendicular to the longitudinal axis of the active region.

Abstract: A compact, high speed EEPROM is disclosed. The design features mirror-image pairs of cells with a common junction buried under a thick oxide. The oxide also supports a portion of the control and floating gates. A single erase gate, also above the oxide, is capable of erasing two rows of cells at once. Each cell also has a second junction which contacts the semiconductor substrate surface. The second junction has a conductive landing pad which facilitates small cell size.

Abstract: In the manufacture of integrated-circuit semiconductor devices, prior to formation of a field oxide, a mask structure is provided on a silicon device area, comprising a pad oxide layer, a polysilicon buffer layer, a protective oxide layer, and a silicon nitride mask layer. Inclusion of the protective layer between polysilicon and silicon nitride layers prevents pad oxide failure and attendant substrate etching during strip-etching of the structure overlying the pad oxide.

Abstract: When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents such flaking by, first, removing the dielectric from the back side, edge, and "clip-mark" areas of the wafer and, second, depositing a glue layer on remaining dielectric on the face of the wafer. Removal of dielectric material is by etching in the presence of a protective layer on the face of the wafer.

Abstract: Contacts to the gate electrode of a first field-effect transistor and the source/drain region of a second field-effect transistor are formed using a silicide as a local interconnect.

Abstract: A rib waveguide polarization modulator is described that permits easy application to monolithic optical circuits. The device comprises a rib waveguide having two polarization modulation sections with a phasing section between the two modulation section. The phasing section adjusts the phase of the optical radiation in the waveguide before it enters the second modulation section.

Abstract: A lead frame for mounting a semiconductor chip in an integrated circuit package incorporates a deformation absorbing member as an integral part of the paddle support arm so that the initial, desired physical and electrical characteristics are unaltered after a forming operation such as paddle downsetting.