Abstract: An impact detector includes a center chip of micromachined silicon, a top cap, and a back plate, with the center chip being sandwiched between the top cap and the back plate. The center chip is micromachined to provide a seismic mass, a perimeter ring, and a plurality of beams interconnecting the perimeter ring and the seismic mass. The center chip and back plate mount aligned switch contacts which close to each other when the seismic mass moves from its static or nondisplaced position to its operative or displaced position. An electrostatic attractive force is generated between the seismic mass and the back plate.

Abstract: A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provide for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufacturing this device is also provided.