Patents Represented by Attorney, Agent or Law Firm R. T. Hodgson
  • Patent number: 6215401
    Abstract: The present invention is an RF tag having a non laminated coating for protecting the semiconductor chip, antenna, and chip antenna connections, and methods for applying the non-laminated coating.
    Type: Grant
    Filed: March 13, 1999
    Date of Patent: April 10, 2001
    Assignee: Intermec IP Corp.
    Inventors: Michael J. Brady, Paul A. Moskowitz
  • Patent number: 5995019
    Abstract: A method of selecting groups of radio frequency RF transponders (tags) for communication between a base station and the tags. The tags are selected into groups according to a physical attribute of the signal sent by the tags to the base station, or according to the physical response of the tags to a physical attribute of the signal sent from the base station to the tags. Communication with the tags is thereby simplified, and the time taken to communicate with the first tag is markedly reduced.
    Type: Grant
    Filed: July 6, 1998
    Date of Patent: November 30, 1999
    Assignee: Intermec I.P. Corp
    Inventors: Trieu Can Chieu, Thomas Anthony Cofino, Harley Kent Heinrich, Paul Jorge Sousa, Li-Cheng Richard Zai
  • Patent number: 5939984
    Abstract: A combination of a radio frequency identification transponder (RFID Tag) and to a magnetic electronic article surveillance (EAS) device is disclosed.
    Type: Grant
    Filed: May 1, 1998
    Date of Patent: August 17, 1999
    Assignee: Intermec IP Corp.
    Inventors: Michael J. Brady, Thomas A. Cofino, Richard J. Gambino, Paul A. Moskowitz, Alejandro G. Schrott, Robert J. von Gutfeld
  • Patent number: 5854486
    Abstract: A thin uniform film of matrix material is deposited from the gas phase on to a substrate for use in Matrix Assisted Laser Desorption and Ionization (MALDI) spectroscopy. The thin uniform film of material may be overcoated with another film of material which has a higher vapor pressure than the matrix material to prevent the matrix material from evaporating during storage and during substantial time in the vacuum environment of the mass spectrometer.
    Type: Grant
    Filed: December 27, 1996
    Date of Patent: December 29, 1998
    Assignee: R. T. Hodgson
    Inventor: Russell W. Dreyfus
  • Patent number: 5841110
    Abstract: A method for Rapid Thermal Processing (RTP) is presented, wherein the broadband reflectivity of an object is measured, and the results of the measurement used by the RTP system to adjust the RTP system parameters used in processing the object.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: November 24, 1998
    Assignee: Steag-Ast GmbH
    Inventors: Zsolt Nenyei, Heinrich Walk, Michael Maurer, Thomas Knarr
  • Patent number: 5837555
    Abstract: A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may closed about the wafer while the closable enclosure is surrounded by the process gas.
    Type: Grant
    Filed: April 12, 1996
    Date of Patent: November 17, 1998
    Assignee: AST Electronik
    Inventors: Guenter Kaltenbrunner, Zsolt Nenyei, Helmut Sommer
  • Patent number: 5628564
    Abstract: A method and apparatus for optical pyrometry in a Rapid Thermal Processing (RTP) System, whereby the radiation used to heat the object to be processed in the RTP system is in part specularly reflected from specularly reflecting surfaces and is incident on the object with a particular angular distribution, and the thermal radiation from the object is measured at an angles different from the angle where the incident radiation specularly reflected from the surface of the object is a maximum.
    Type: Grant
    Filed: March 28, 1995
    Date of Patent: May 13, 1997
    Assignee: AST Elekronik GmbH
    Inventors: Zsolt Nenyei, Andreas Tillmann, Heinrich Walk
  • Patent number: 5559058
    Abstract: A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. A "traveling oxide" can be produced when the oxygen containing fluid etches the native oxide. To obtain smooth oxides when the compound semiconductor material contains layers of different material, the oxide growth is monitored, and the pulse parameters changed in response to the monitoring of the oxide growth.
    Type: Grant
    Filed: November 15, 1994
    Date of Patent: September 24, 1996
    Assignee: Peter S. Zory, Jr.
    Inventors: Peter S. Zory, Jr., Douglas A. Hudson, Jr., Michael J. Grove