Patents Represented by Attorney Rabin & Berdo, Jr.
  • Patent number: 8226527
    Abstract: A straddle type vehicle with a control unit that improves riding comfort and controls the speed change of a continuously variable transmission electronically. Engine output is controlled by an accelerator operating part. The control unit shifts to a kick down mode where a speed change ratio is shifted to be lower than in a normal mode according to operation of a kick down switch separate from the accelerator operating part. A kick down release command is issued according to a state of the vehicle, and kick down mode is released and returned to normal mode.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: July 24, 2012
    Assignee: Yamaha Hatsudoki Kabushiki Kaisha
    Inventor: Toshio Unno
  • Patent number: 8155839
    Abstract: A motor vehicle steering apparatus is provided with: a steering-angle feedforward-control-value setting unit arranged to set a steering angle value that corresponds to a steering state; a vehicle-behavior-stabilization controlling unit including a steering-angle feedback-control-value setting unit arranged to set a steering-angle correction value that corresponds to vehicle behavior; and a feedback-gain changing unit arranged to decrease a gain of the steering-angle feedback-control-value setting unit to a value less than at a normal time, when the steering-angle correction value is equal to or less than a predetermined value, during vehicle-behavior stabilizing control by the vehicle-behavior-stabilization controlling unit.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: April 10, 2012
    Assignee: Jtekt Corporation
    Inventors: Shiro Nakano, Masaya Segawa
  • Patent number: 8124982
    Abstract: The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle ? in the c-axis direction preferably satisfies ?1°<?<0°.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: February 28, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Kuniyoshi Okamoto, Hiroaki Ohta