Abstract: A method of making a triple level ROM device includes forming at least first, second and third metallic oxide semiconductor (MOS) structures. Each MOS structure has a source terminal and a drain terminal located within a substrate, a channel located between the source and drain terminals, and a gate terminal structure located above the channel. The source and drain terminals serve as bit lines and the gate terminal serves as a word line. A dielectric layer and a cap layer are formed in sequence above the first, second and third MOS structures, thereby forming first, second and third memory cell units from the first, second and third MOS structures, respectively. A first coding process is performed, which includes forming a photoresist layer above the gate terminal structure of at least the first memory cell unit. Portions of the cap layer having no photoresist coverage are removed to form a cap above the first memory cell unit.

Abstract: A high storage capacity, wide data channel SRAM having a 64-bit wide data input/output channel, 4 Mbyte or 2 Mbyte of memory, and packaged as a 100-pin QFP or TQFP. The SRAM can be a substitute for a conventional 128 pin QFP or TQFP SRAM because all the functions including pipeline burst transmission are present. Moreover, the SRAM has a comparatively lower package testing and production cost.

Abstract: A machine part has a rolling contact surface (11a) having a lot of very small recesses which are independent of each other formed thereon. The maximum height (Ry) of a roughness profile (R) obtained by cutting the contact surface (11a) by a plane perpendicular to the contact surface (11a) is 1 to 3 .mu.m, and the peak height Rp of a center line of the roughness profile (R) and the valley depth Rv of the center line satisfy the relationship of Rp/Rv.ltoreq.0.3. In this case, the contact surface (11a) has very low crests which are relatively densely distributed and very deep troughs which are relatively sparsely distributed. A sufficiently wide contact area is ensured by the former very low crests which are relatively densely distributed. An oil sump in a sufficient amount is formed by the latter deep troughs which are sparsely distributed.

Abstract: An improved metal oxide field effect transistor (MOSFET) provides an electro-static protection device with a high resistance to electro-static discharge. The electro-static discharge protection device has pre-gate heavily doped regions adjacent to the source and drain regions, where the pre-gate regions extend at least partially under the gate electrode. A single heavily doped pre-gate region may be provided for the MOSFET of the electro-static discharge protection circuit.

Abstract: A method for forming a high capacitance charge storage structure that can be applied to a substrate wafer having MOS transistor already formed thereon. The method is to form an insulating layer above the substrate wafer. Next, a contact window exposing a source/drain region is formed in the insulating layer. Then, a tungsten suicide layer, which functions as a lower electrode for the charge storage structure, is formed over the substrate. Thereafter, a tungsten nitride layer is formed over the tungsten silicide layer, and then a dielectric layer is formed over the tungsten nitride layer. The dielectric layer is preferably a tantalum oxide layer. Finally, a titanium nitride layer, which functions as an upper electrode for the charge storage structure, is formed over the tantalum oxide layer.

Abstract: An IC card connection unit according to the invention is for use in electronic equipment into which an IC card is inserted. It included a body provided with a contacting arrangement for contacts, and a card supporter fixedly attached to the body, provided with a recess for forming a card insertion path. A card butting part movable when pressed by the tip of the IC card is disposed in the card insertion path, and a pressing force applied to the card butting part is converted into a force acting in the direction crossing the direction of the card insertion path, whereby contacts of the equipment are shifted so as to be in contact with contacts of the IC card while the IC card is retained in the card insertion path.

Abstract: A DRAM capacitor structure and its manufacturing include covering a semiconductor substrate with a first conducting layer. A first insulating layer and a second insulating layer are alternately stacked at least once above the first conducting layer to form a multi-layered structure. A contact window opening is formed in the multi-layered structure to expose a source/drain region located above the semiconductor substrate. A pattern is etch-defined on the multi-layered structure, using the first insulating layer as an etching stop layer. Part of the second insulating layer is etched away to form a cross-sectional profile similar to twin towers, with each tower having the form of a vertical T-stack. A second conducting layer covers the multi-layered structure. The first insulating layer and the second insulating layer of the multi-layered structure, as well as the second conducting layer in a top part of the multi-layered structure, are etched away to form a lower electrode.

Abstract: A belt unit has a drive roller, a driven roller, and a tension roller. An endless belt is mounted about the drive roller, driven roller, and tension roller. When the drive roller is driven by a motor, the endless belt runs with a print medium placed thereon. The tension roller longitudinally extends in a direction perpendicular to the direction in which the belt runs. First and second support members are pivotally mounted on a frame and support the tension roller between the first and second supports. The spring urges the support members so that the tension roller exerts tension on the belt. A coupling member such as a rod, wire, and plate couples the first support member to the second support member, so that a first pivotal movement of one of the first and second support members causes a second pivotal movement of the other of the first and second support members, the first and second pivotal movements applying a substantially same urging force to the belt.

Abstract: A method of observing a tungsten plug of a semiconductor device using a microscope includes cutting the semiconductor device at the center of the tungsten plug. The semiconductor device is then stained with a reagent which includes hydrogen peroxide and ammonia and etched with a solution containing hydrofluoric acid. The fine structure of the grain of the tungsten plug of the semiconductor device is then observed with a microscope.

Abstract: According to the present invention, an initial correction is executed on the dynamic load radii of the tires automatically, for example, at the time when the power supply of the computer for executing a tire air pressure reduction detection processing is turned on for the first time after the tire air pressure reduction detecting apparatus has been produced. It is therefore not required to press the initialization switch for making an initial correction. This results in a reduction in the number of inspection steps.

Abstract: A DRAM capacitor is formed using a process that avoids high temperature processing steps and which emphasizes low cost processes. An interlayer dielectric, typically CVD TEOS oxide, is provided over the transfer FET and bit line contact of the DRAM cell. The interlayer dielectric is planarized and an etch stop layer is provided over the planarized surface of the etch stop layer. A contact via is formed to expose a source/drain region for the transfer FET. Doped polysilicon is provided to fill the contact via and to form a first layer of doped polysilicon over the etch stop layer. The first polysilicon layer is patterned to form a plate aligned over the contact via using a first photoresist mask and etching. The first photoresist mask is left in place over the plate and a first layer of selective oxide is deposited over the etch stop layer so that the first selective oxide layer does not deposit over the photoresist mask.

Abstract: A paper feeding mechanism holds a stack of print paper in pressure contact with a paper pick-up roller. The paper pick-up roller feeds the print paper out of the tray one page at a time when the paper pick-up roller is rotated. The paper feeding mechanism has first and second supporting surfaces. The first supporting surface holds the stack of print paper from behind a back surface of the print paper. The first supporting surface is at a second angle .theta. 2 with the horizontal direction such that the print paper slides along the first supporting surface to the second supporting surface with the aid of the gravity of the print paper. The second supporting surface supports the stack of print paper thereon. The second supporting surface is inclined at a first angle .theta. 1 with a horizontal direction such that a leading edge of each page of the print paper abuts the second supporting surface and slides toward the rotating paper pick-up roller with the aid of a gravity of the print paper.

Abstract: The interconnection board includes a plurality of non-conductive insulation layers and through-holes running through the insulation layers. A plurality of conductive patterns are provided on each insulation layer, electrically insulated from each other, and exposed to the inside of one through-hole at the same axial position of the through-hole. The connection pin has a non-conductive stem and a connection pattern provided on the non-conductive stem. The connection pattern extends in the axial direction of the connection pin and electrically connects two conductive patterns provided on different insulation layers at the same circumferential position in the through-hole, by bringing the conductive patterns into contact at positions which are axially different and circumferentially the same.

Abstract: A two-wavelength laser pick-up head used for accessing DVD, CD, CD-R and CD-E systems. The two-wavelength laser pick-up head includes a shorter wavelength laser optical path for reading the data from a DVD system, and a longer wavelength laser optical path for reading the data from a CD or CD-R system. The above two optical paths use the same collimator and the same objective lens. There is a compensator lens which is used in the longer wavelength laser optical path for correcting the spherical aberration due to the thick substrate of the CD or CD-R.

Abstract: A DRAM capacitor and a method of making the same includes the provisions of providing a semiconductor substrate having a MOS transistor with a gate and source/drain regions formed thereabove. A first insulating layer covers the semiconductor substrate. A conducting plug is formed in the first insulating layer. Thereafter, a multi-layered structure is formed above the first insulating layer and the conducting plug, with at least one pair of alternately formed layers, including a first conducting layer followed by a second insulating layer. Then, an opening is formed through the multi-layered structure to expose the conducting plug. Subsequently, a pattern is etch-defined on the multi-layered structure to expose part of the first insulating layer. After that, part of the second insulating layer is etched away, to shape the multi-layered structure into a cross-sectional profile similar to two towers, each in the form of a vertical stack of Ts, with each tower standing side-by-side and adjacent to each other.

Abstract: An electrophotographic printer includes a rotating photoconductive drum, a developing unit, a transfer roller, and a neutralizer. The neutralizer neutralizes a second area of the surface of the photoconductive drum different from a second area in which the toner is applied. A sensor may be provided along the transport path to detect a leading end and a trailing end of the print medium passing along the transport path. In accordance with the sensor output, the neutralizer neutralizes the second area (i.e., top margin and bottom margin) on the photoconductive drum adjacent the leading end and the trailing end of the print medium. A neutralization data generator may be added. The neutralization data generator searches the bit map data for dots which should be printed, and produces neutralization data on the basis of the dots. Then, the neutralizer illuminates only the second area (i.e., areas in which toner is absent) in accordance with the neutralization data.

Abstract: A bridge device for connecting networks together via data link layers, that assigns input port numbers unique to each port, to headers of input memory access control packets. A content-addressable memory stores destination addresses and groups of port numbers corresponding to the destination addresses. A determiner such as a controller determines whether or not a destination address of a memory access control packet is stored in the memory and determines whether or not a port number corresponding to the destination address coincides with an input port number of the memory access control packet. Based on the determinations made by the determiner, a selector selects one of the following as an output port number: either a port number corresponding to the destination address, or a port number designating all ports other than the input port, or a port number not designating any ports. An output port number assigner assigns an output port number to a memory access control port.