Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise, could impair device performance. To accomplish this, the insulator layer is formed on a gallium arsenide substrate as an integral composite or variegated structure including (a) a uniform homogenous film of Group IIa metal atoms attached directly onto a gallium arsenide substrate surface in the form of a monolayer, and (b) a single crystal epitaxial film of a Group IIa metal fluoride deposited on the monolayer.

Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: Process for making a semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a metal halide as a precursor (e.g., BaF.sub.2 or SrF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of a temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness.

Abstract: An abrasive article having a sheet-like structure having a major surface and having deployed in a fixed position thereon a plurality of abutting abrasive composites in an area spacing of at least 1,200 composites/cm.sup.2, each of the composites comprising a plurality of abrasive particles dispersed in a binder. The invention also relates to a method for reducing a surface finish of a workpiece surface using the abrasive article and a process for making the abrasive article of the invention.

Abstract: An abrasive article having a sheet-like structure having at least one major surface having deployed thereon a plurality of individual abrasive composites, each abrasive composite comprising a plasticizer and a plurality of abrasive particles dispersed in a binder, wherein said binder is formed by polymerizing a binder precursor and said plasticizer being combined with said binder precursor prior to said polymerizing in an amount of 30 to 70 parts plasticizer per 100 parts by weight of the combined binder precursor and plasticizer. There is also a method of using such as abrasive article to reduce the surface finish of a workpiece and a process of making the abrasive article.

Abstract: The present invention provides a method of forming an abrasive article comprising the steps of providing an embossed carrier web having a plurality of recesses formed in the front surface thereof; filling the recesses with an abrasive composite slurry that includes a plurality of abrasive grains dispersed in a hardenable binder precursor, hardening the binder precursor to form individual abrasive composite members, laminating a backing sheet to the front surface of the embossed carrier web. The resulting article includes a plurality of precisely spaced abrasive composite members, positioned in a predetermined pattern and orientation on a backing sheet.

Abstract: This invention provides a method of making an abrasive article. The method of this invention comprises the steps of:a. providing a backing having a front surface;b. providing a radiation energy transmissive production tool having a contacting surface;c. applying a mixture comprising a plurality of abrasive particles and a binder precursor onto the contacting surface of the production tool;d. causing the mixture on the contacting surface of the production tool to come into contact with the front surface of the backing such that the mixture wets the front surface of the backing;e. transmitting radiation energy through the production tool to at least partially cure the binder precursor to form a shaped, handleable structure; andf. separating the shaped, handleable structure from the production tool.The shaped, handleable structure can be fully cured to form a coated abrasive article.

Abstract: Granular materials having a tin-acrylate polymer coating are described which are algae-resistant. A method of inhibiting the growth of algae on roofing granules and other particulate materials attached to substrates by the use of tin-acrylate-containing polymers either as a topical treatment or as a polymeric binder is also presented. The methods presented are an advancement in the art in that in addition to algae-resistance, the polymers also confer other desirable properties to the granules onto which they are coated, such as increased adhesion to asphalt shingles.

Abstract: An improved liquid spray masking composition including an effective amount of a nonvolatile polyhydroxy component is provided. The preferred polyhydroxy components comprise polyglycerols, especially corn syrup. The presence of such materials in masking compositions improves performance of the compositions with respect to inhibition of high temperature swelling, blistering or spotting of the painted surface to which it is applied.

Abstract: Materials, particularly wood materials and calcium carbonate-containing materials such as concrete and marble, can be protected from the growth of algae by being treated with a compound containing tin covalently bonded to a silylating group such that cleavage of the covalent bonds due to hydrolysis or photolysis is minimized, thus making the treatment ecologically safe. One such compound is (n-Bu).sub.3 SnCH.sub.2 CH.sub.2 Si(OEt).sub.3. The tin compound can either be incorporated into raw materials from which materials are to be made, or it can be applied to the finished materials. When the tin compound is applied to a material that is algae streaked, the streaking should disappear.

Abstract: A granular material which includes an inorganic substrate and a ceramic coating shows improved adhesion to bituminous surfaces, decreased alkalinity, and, when formulated as a three coated algae-resistant granule, exhibits improved algae-resistance over previously known granules. The ceramic coating comprises the reaction product of an alkali metal silicate and an aluminosilicate, the ceramic coating further including a borate compound and zinc oxide having a particle size less than about 0.13 micrometer. It has been found that the use of a borate compound and zinc oxide having the stated particle size allows the granules to be adhered to a substrate for longer periods of time, thus producing a surface which retains its original color for a longer period of time. Methods of producing such ceramic-coated granular materials, and composite sheets including the granules are also presented.

Abstract: A method for deoiling oil residues from surfaces of inorganic particles each having pigment in an outer layer thereon, comprising contacting the surfaces with a deoiling solution comprising a mixture of monocyclic terpene and aliphatic petroleum distillates in an amount and manner effective to wet substantially all the surfaces of the inorganic particles, whereby the deoiling solution removes substantially all the oil residues from the surfaces of the inorganic particles.

Abstract: An improved liquid spray masking composition including an effective amount of a non-volatile polyhydroxy component is provided. The preferred polyhydroxy components comprise polyglycerols, especially triglycerols or larger polyglycerols. The presence of such materials in masking compositions improves performance of the compositions with respect to inhibition of high temperature swelling, blistering or spotting of the painted surface to which it is applied.