Abstract: A method is provided, the method comprising forming a first of n masking layers for a device and forming a first of n phase-shift layers for the device using the first of the n masking layers. The method also comprises forming a second of n masking layers for a device, and forming a second of n phase-shift layers for the device using the second of the n masking layers and forming at least n+1 and at most 2n different optical thicknesses for the device using the n masking layers and the n phase-shift layers.
Type:
Grant
Filed:
September 11, 2001
Date of Patent:
February 24, 2004
Assignee:
Applied Optoelectronics, Inc.
Inventors:
Wen-Yen Hwang, Klaus Alexander Anselm, Jun Zheng, James N. Baillargeon