Abstract: The present invention is a system and method to significantly reduce noise associated with air-moving devices such as an axial flow fan using a fan shroud and barrel combination with built in silencers such as Helmholtz resonators. The invention can be applied to a variety of applications such as a thermal management system for a fuel cell powered vehicle. The resonator can be a hollow cavity in networks attached to an outer or inner barrel or shroud and tuned to reduce noise at predetermined noise frequency ranges within the airflow. The invention can also attach stator members on the inner surface of the outer barrel to further reduce noise. Additional sound absorbing material, such as steel wool, can be disposed within the resonator cavity.

Abstract: A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions.

Abstract: A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.

Abstract: The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Abstract: A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electro

Abstract: An electronic device that is equipped with a plurality of bonding pads positioned on the device for making electrical interconnections and electrically conductive composite bumps adhered to the bonding pads wherein the bumps are formed of a composite material consisting of a thermoplastic polymer and at least about 30 volume percent of conductive metal particles based on the total volume of the metal particles and the thermoplastic polymer. The present invention is also directed to a method of making electrical interconnections to an electronic device by pressing a plurality of composite bumps of a polymeric based material against a substrate having an electrically conductive surface by mechanical means under a sufficient temperature and/or a sufficient pressure.

Abstract: A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

Abstract: A method of making Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin is disclosed for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.