Patents Represented by Attorney Rauschenbach Patent Law Group, LLP
-
Patent number: 7855493Abstract: A microchannel plate includes a substrate defining a plurality of pores extending from a top surface of the substrate to a bottom surface of the substrate. The plurality of pores includes a resistive material on an outer surface that forms a first emissive layer. A second emissive layer is formed over the first emissive layer. The second emissive layer is chosen to achieve at least one of an increase in secondary electron emission efficiency and a decrease in gain degradation as a function of time. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate.Type: GrantFiled: February 27, 2008Date of Patent: December 21, 2010Assignee: Arradiance, Inc.Inventors: Neal T. Sullivan, David Beaulieu, Anton Tremsin, Philippe De Rouffignac, Michael D. Potter
-
Patent number: 7847241Abstract: In various aspects, ion sources, mass spectrometer systems, and a power supply circuit coupled to a feedback circuit are provided. A power supply is provided that includes at least the power supply circuit and is operable to transfer charge to a load. The feedback circuit is responsive to a DC component of an output voltage supplied by the power supply in a first feedback loop and an AC component of the output voltage in a second feedback loop to produce a feedback signal representative of at least one of: a value of the output voltage before a charge transfer from a capacitor of the power supply to a load; the value of the output voltage during the charge transfer from the capacitor of the power supply to the load; or the value of the output voltage after the charge transfer from the capacitor of the power supply to the load.Type: GrantFiled: January 8, 2009Date of Patent: December 7, 2010Assignee: DH Technololgies Development PTE. Ltd.Inventor: Stephen C. Gabeler
-
Patent number: 7838822Abstract: In various embodiments the present teachings provide high-voltage, asymmetric-waveform power supplies useful for, e.g., differential mobility spectrometry. In various embodiments, provided are high-voltage, asymmetric-waveform power supplies for high-field asymmetric waveform ion mass spectrometers having field values greater than about 5,000 volts cm?1 and varying in time at rates greater than about 600 kilohertz (KHz).Type: GrantFiled: October 28, 2008Date of Patent: November 23, 2010Assignee: DH Technologies Development Pte. Ltd.Inventor: John Vandermey
-
Patent number: 7838824Abstract: The present invention comprises apparatus and methods for rapidly and accurately determining mass-to-charge ratios of molecular ions produced by a pulsed ionization source, and for fragmenting substantially all of the molecular ions produced while rapidly and accurately determining the intensities and mass-to-charge ratios of the fragments produced from each molecular ion.Type: GrantFiled: May 1, 2007Date of Patent: November 23, 2010Assignee: Virgin Instruments CorporationInventor: Marvin L. Vestal
-
Patent number: 7826751Abstract: A bi-directional signal interface includes a first waveguide that propagates a first traveling wave. The first waveguide has one end that is coupled to a RF input port that receives a RF transmission signal and another end that is coupled to a RF bi-directional port that receives a RF reception signal and that transmits the RF transmission signal. A second waveguide is positioned proximate to the first waveguide. The second waveguide has one end that is coupled to an output port that passes the received RF reception signal. A non-reciprocal coupler couples fields from the first waveguide to the second waveguide so that the RF reception signal from the bi-directional port couples from the first waveguide to the second waveguide in a substantially non-reciprocal manner and then passes through the output port, and the RF transmission signal from the RF input port passes through the first waveguide to the RF bi-directional port.Type: GrantFiled: June 12, 2009Date of Patent: November 2, 2010Assignee: Photonic Systems, Inc.Inventors: Charles Cox, Edward Ackerman
-
Patent number: 7811421Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.Type: GrantFiled: July 18, 2005Date of Patent: October 12, 2010Assignee: Zond, Inc.Inventor: Roman Chistyakov
-
Patent number: 7808184Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.Type: GrantFiled: August 18, 2006Date of Patent: October 5, 2010Assignee: Zond, Inc.Inventor: Roman Chistyakov
-
Patent number: 7809216Abstract: A signal interface includes a dual-drive device having a first and a second input port that receive an outgoing signal. One of the first and the second input ports also receive an incoming signal. The dual-drive device passes the incoming signal to an output port while isolating the outgoing signal from the incoming signal.Type: GrantFiled: March 16, 2007Date of Patent: October 5, 2010Assignee: Photonic Systems, Inc.Inventor: Charles H. Cox, III
-
Patent number: 7787720Abstract: An optical coupling device including: at least a first input port for delivering an optical input signal beam that includes a plurality of wavelength channels; at least a first optical output port for receiving an optical output signal beam; a wavelength dispersion element for spatially separating the plurality of wavelength channels in the optical input signal beam to form a plurality of spatially separated wavelength channel beams; an optical coupling device for independently modifying the phase of each of the spatially separated wavelength channel beams such that, for at least one wavelength channel beam, a selected fraction of the light is coupled to the first output port and a fraction of the light is coupled away from the first output port.Type: GrantFiled: September 27, 2004Date of Patent: August 31, 2010Assignee: Optium Australia PTY LimitedInventors: Steven James Frisken, Glenn Wayne Baxter, Hao Zhou, Dmitri Abakoumov
-
Patent number: 7759138Abstract: A method of fabricating a microchannel plate includes forming a plurality of pores in a silicon substrate. The plurality of pores is oxidized, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of pores. At least a portion of the silicon dioxide layer is stripped, which reduces a surface roughness of the plurality of pores. A semiconducting layer can be deposited onto the surface of the silicon dioxide layer. The semiconducting layer is then oxidized, thereby consuming at least some of the polysilicon or amorphous silicon layer and forming an insulating layer. Resistive and secondary electron emissive layers are then deposited on the insulating layer by atomic layer deposition.Type: GrantFiled: September 20, 2008Date of Patent: July 20, 2010Assignee: Arradiance, Inc.Inventors: David Beaulieu, Neal T. Sullivan
-
Patent number: 7760343Abstract: An apparatus for determining V? of an optical modulator includes an RF source that generates a variable power RF modulation signal for modulating an optical modulator. An optical detector detects a modulated optical signal generated by the optical modulator and generates an electrical detection signal in response to the detected modulated optical signal. An RF power meter measures an RF detection signal power to determine a minimum RF detection signal power, an RF modulation signal power corresponding to the minimum RF detection signal power being used to calculate V? of the optical modulator.Type: GrantFiled: April 4, 2007Date of Patent: July 20, 2010Assignee: Photonic Systems, Inc.Inventors: Harold V. Roussell, Edward I. Ackerman
-
Patent number: 7750575Abstract: The present invention relates to a plasma source. The plasma source includes a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.Type: GrantFiled: October 3, 2008Date of Patent: July 6, 2010Assignee: Zond, Inc.Inventor: Roman Chistyakov