Abstract: A phase detector and signal locking system controller for use in a digital phase-locked loop (PLL) application includes a first and a second phase detector where the first phase detector result is used to control the initial pull-in and the second phase detector is used to control fine tuning once the phase differences are too small for appropriate detection by the first phase detector. A post processing and control unit operates to effectively merge the two phase detector outputs and to apply the appropriate gain factor that can be used to control a PLL system.

Abstract: A line driver for coupling a data transceiver to a transmission line having a load impedance via a transformer with a turns ratio of 1:n includes an input port for receiving an input signal voltage from the data transceiver, an output port for supplying an output signal voltage to the transformer, and an amplifier circuit for amplifying the input signal voltage. The amplifier circuit includes a first output stage, a second output stage coupled to the output port, an output resistor coupled to the first output stage, a feedback path from the first output stage to an input of the amplifier circuit, and a line matching network coupled between the first output stage and the second output stage, for compensating variations in the load impedance, so that a synthesized output impedance of the line driver substantially matches an actual load impedance Z of the transmission line.

Abstract: This invention relates to the field of electrical technology, and relates particularly to a method for the continuous transformation of electrical energy with its subsequent transmission from an initial source (transformer) to a consuming device, and also to an apparatus for the implementation of this method of transformation and the supplying of power to electrical devices through a transmission line which does not form a closed circuit, ie consists of a single conducting wire.

Abstract: The present invention provides a small and light four-stroke cycle internal combustion engine applicable to a compact power working machine. A cylinder head is provided with an ignition plug and an exhaust port with an exhaust valve. A crankcase is fixed to the bottom of a cylinder block are to form a closed crank chamber. On the cylinder block formed are a first port and a second port which are open to a combustion chamber and are opened and closed by a piston, with the second port being communicated with the crank chamber through a communicating passage, the first port being connected to a carburetor, and an air-fuel mixture mixed with lubricating oil being supplied from the carburetor through this first port to the crank chamber.

Abstract: In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.

Abstract: A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

Abstract: A copolymer useful as a photoresist resin for submicrolithography, comprising glutarimide derivatives and acrylic acid derivatives as shown in Formula I and a photoresist composition comprising the same. ##STR1## wherein, R.sub.1 is a straight or branched alkyl group containing 0-30 carbon atoms; R.sub.2 and R.sub.3 independently represent straight or branched alkoxy or cycloalkoxy groups containing 1-15 substituted or non-substituted carbon atoms; R.sub.4 and R.sub.5 independently represent hydrogen or an alkyl group; and p, q and r, which may be the same or different, each is a polymerization ratio; p ranges from 10 to 90, q ranges from 10 to 90 and r ranges from 0 to 50.

Abstract: A field oxide formation method involving a primary field oxidation, which is carried out at a predetermined low temperature to form a field oxide film having a thickness smaller than a target thickness, and a secondary field oxidation, which is carried out at a higher temperature capable of relatively reducing the occurrence of a field thinning phenomenon, to form the remaining thickness portion of the target field oxide film. The field thinning phenomenon involved in a field oxidation is reduced. The characteristics of a finally produced gate oxide film is also improved. Consequently, the throughput and reliability of semiconductor devices having gate oxide films are improved.

Abstract: A semiconductor device for automatically detecting an external interface voltage is disclosed, including a voltage converter for receiving an external interface voltage, and decreasing the external interface voltage value, and a voltage comparator for comparing the voltage outputted from the voltage converter with the internal supply voltage of a semiconductor chip. The semiconductor device automatically detects an external interface voltage environment where the semiconductor chip is used, and also automatically controls the magnitude of output buffer of the semiconductor chip according to the detected external interface voltage value, to prevent the operation speed from being deterioration.

Abstract: A machine vision system that can address a number of board, lineal, cant, and flitch inspection problems by incorporating all the sensors needed to address the surface feature detection problem, the three-dimensional shape detection problem, and the internal feature detection problem. To detect surface features, two color cameras are employed, one for imaging each of the major faces of a board, lineal, cant, or fitch. To address the three-dimensional shape detection problem, a high speed laser profiling device is employed. An x-ray scanning system is employed to detect internal features. The system is able to process material in a species-independent manner by using a histogram-based segmentation procedure for analyzing both the camera imagery and the x-ray imagery; and can detect small defects by removing the effects of large features from the histograms once they have been detected. The system also utilizes redundant information from the set of multiple sensors to improve system accuracy.

Abstract: A method for fabricating silicon-on-insulator (SOI) wafers which is capable of simplifying the fabrication process while improving the productivity of SOI wafers. In accordance with this method, a first wafer formed with a thermal oxide film is bonded to a second wafer formed with an oxygen ion-implanted region and a hydrogen ion-implanted region. The bonded wafer structure is annealed and then cut along the hydrogen ion-implanted region, so that it is divided into two wafer structures. The wafer structure including the first wafer is annealed to obtain a strengthened chemical coupling property. The wafer structure including the second wafer is annealed to oxidize the oxygen ion-implanted region of the second wafer, thereby forming an oxide film in the second wafer. The first and second wafers are then planarized, thereby forming a pair of SOI wafers.

Abstract: The present invention concerns an opto-mechanical system and method for obtaining scenographic and decorative effects on surfaces suitable as screens. The system includes a container of liquid, such as water and a movable planar element placed inside said container. An actuator is provided for variably displacing the movable planar element relative to the liquid to generate a variety of movements of waves above the upper face of the movable planar element, while a light source is placed relative to the container to project the movements of the waves onto the surfaces. The movable planar element can also be displaced manually. The system permits the creation of a great variety of wave design patterns due to the displacements of the movable planar element inside the container of liquid.

Abstract: A synchronous dynamic random access memory (DRAM) for stabilizing a redundant operation prevents a redundant decoder's malfunction which occurs in a step of latching a redundant decoder according to a fuse programmable information during a power-up time.

Abstract: A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

Abstract: A burst mode end detection unit comprising a first decoding circuit for pre-decoding external burst length data, a plurality of counters being reset in response to a reset signal to generate different counts in response to a clock signal in such a manner that the counts are sequentially incremented by one, the reset signal being generated when a burst mode is designated, a second decoding circuit for decoding output signals from the counters, and a comparison circuit for comparing an output signal from the first decoding circuit with an output signal from the second decoding circuit and detecting an end time of the burst mode in accordance with the compared result. According to the present invention, the burst mode end detection unit can accurately detect the end time of the burst mode and notify a synchronous DRAM of the detected burst mode end time. Therefore, the synchronous DRAM can rapidly perform the subsequent operation.

Abstract: A method for forming a layer of hemispherical silicon grains having a desired density and a desired shape in order to increase the surface area of the storage electrode of a capacitor. The method involves the formation of a thin oxide film over an under silicon layer to be formed with hemispherical silicon grains, so that the formation of those hemispherical silicon grains can be carried out in such a manner that the hemispherical silicon grains have a desired density and a desired shape under given conditions irrespective of whether or not the under silicon layer is doped with impurity ions and of the crystalline structure of the under silicon layer.

Abstract: A column decoder array device used in a synchronous graphic random access memory, in which column decoders adapted to simultaneously operate for a block write function are arranged in a laterally symmetrical manner or in a shifted manner, so as to effectively reduce the intensity of peak current.