Abstract: The present invention is directed to a voltage controlled single-package integrated circuit device, capable of thermal compensation, for biasing a quasi-linear bipolar device. The bias circuit also provides a low impedance source to a RF device so that the bias point does not dynamically change with the RF signal, thus improving linearity. Changes in the base-emitter voltage level of the RF device are monitored by a reference diode to provide automatic temperature compensation. The reference diode is in close thermal proximity to the RF device, allowing for accurate thermal tracking. The base-emitter voltage may be electronically adjusted by means of a control voltage input, such being suitable for hook-up to a computer system having a digital to analog convertor thereby allowing for fine voltage adjustments. The control voltage may also be used to adjust the class of operation of the RF device or provide external temperature control.

Abstract: An output driver stage for an integrated circuit device includes slew rate control on the final logic gate. Slew rate control is provided by resistors located in the power supply path for the gate. A switch is connected in parallel across the resistor, and can be used to short the resistor to disable or reduce slew rate limiting. The switch is connected to another location within the output circuitry, and disables or reduces the slew rate limiting resistor during a portion of the switching cycle. This provides for slew rate limiting during a portion of switching when it is most needed, and disables it when slew rate limiting is not required.