Abstract: A contact and interconnect for an MOS VLSI semiconductor device employs a contact hole in an insulator coating; the contact hole has vertical instead of sloped sidewalls. A first metallization is applied by CVD so that the sidewalls will be coated to a uniform thickness, then this first metal is anisotropically etched to leave metal sidewalls. A second metallization is applied by sputtering or evaporation, which provides a more dense and electromigration-resistant coating. A refractory metal layer may be interposed between the metallization and the silicon substrate, and also between the metal interconnect and the insulator, since the insulator usually contains phosphorus.