Abstract: A deicer assembly 32 for attachment to an airfoil includes a plurality of substantially parallel tube-like passages 36 formed by stitching parallel lines 78 through a pair of intermediate plies 52, 54. A zig-zag stitch line 76 criss-crosses the parallel tube lines 78 so that when the deicer is inflated by pressurized fluid a dimple matrix inflation pattern is formed.

Abstract: A variable rate elastomeric torsion spring 30 includes a generally cylindrical elastomeric member 36 having an outer shell 34 bonded thereto on the outside and a plurality of adjacent, axially aligned inner sleeves 36, 38 bonded thereto on the inside. A variable spring rate is obtained by the spring by selectively engaging different combinations of the inner sleeves.

Abstract: In a marine vessel having a drive shaft that extend rearwardly from its hull, wherein the drive shaft has a coupling and a bearing assembly along its length that are supported by struts, which struts are also secured to the hull of the vessel. A coupling cover encompasses the coupling and is mounted adjacent to a bearing assembly. A fairwater encompasses the coupling cover and is attached to the bearing assembly or the strut associated therewith to define a chamber and a clearance space between the fairwater and the coupling cover for directing fluids therethrough and through the bearing assembly to lubricate such bearing assembly. Vanes are located on the coupling cover or on a separate support located within such chamber to enhance the fluid flow through the bearing assembly.

Abstract: A dual mode exterior lamp for an aircraft includes a higher intensity anticollision light, a lower intensity recognition light, a power supply for the lights, and means for activating the anticollision light when the aircraft is airborne and for activating the recognition light when the aircraft is on the ground. In the preferred embodiment the activating means is responsive to a landing gear position switch.

Abstract: A modular drainmast assembly for an aircraft includes a drain tube assembly removably enclosed in a fairing that is removably attachable to an aircraft. The electrically heated drain tube assembly may be accessed in the field for service, repair or replacement.

Abstract: A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to 300.degree.-600.degree. C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

Abstract: A pneumatic deicing system includes a deicer assembly 32 comprised of an outer ply 52, an inner ply 54, and a plurality of inflatable tube-like members 36 provided therebetween. The deicer assembly is disposed directly on top of and bonded to the airfoil 34. Pressurized fluid is provided to the tube-like members via a manifold 40 in the deicer assembly which is positioned directly over a plurality of ducts 42 provided through the airfoil.

Abstract: An improved NPN transistor and method of building thereof includes: a P- substrate 50; a N+ buried region 52 provided therein; a N- epitaxial layer 56 deposited onto the N buried region; a P base diffusion region 66 in the N- epi layer; a N+ reach-through region 60 through the N- epi layer to the N+ buried layer to thereby define a collector; a N++ implant or diffusion region 102 provided in the P base diffusion region to thereby define an emitter; and a P++ implant region 74 provided around the N++ emitter implant region which thereby defines the extrinsic base of the transistor, wherein the P++ implant region extends through the P region into the N- epi layer and wherein the P++ implant region extends as close to the N++ emitter implant region as possible without encroaching on the emitter.

Abstract: An improved high pressure impulse valve includes a pilot section, an intermediate section, and an output section which are pressurized to approximately equilibrium with the inlet pressure during a load portion of the operating cycle and which cooperate to provide extremely rapid full opening of the output section to release fluid under pressure from an accumulator through an output section piston seat. The valve is particularly suitable for use in combination with pneumatic impulse separation systems such as those employed for deicing aircraft surfaces.

Abstract: A hardware simulator comprises a plurality of interconnected programmable logic devices (20) which are connected via a data bus (22) and a control bus (24). Address signals on control bus (24) are read by an interconnect logic block (18) associated with each device to selectively link the output latches and input latches of the devices (20) to the data bus (22). Accordingly, a series of signal transfers is carried out between the devices simulating the hardware. The interconnect logic blocks may be programmed to provide whatever connections between devices are required.

Abstract: A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.

Abstract: A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.

Abstract: A method for isolating a film from a substrate 50 includes the steps of: providing an N+ layer 52 on the substrate 50; forming an insulation layer 54 onto the N+ doped layer 52; etching a pair of trenches 56, 58 through the insulation layer 52 to thereby form an isolation region 60 of insulation material; laterally etching a cavity 62 underneath the isolation region; and, forming a film 64 onto the isolation region.

Abstract: A method for isolating areas of silicon from a substrate 50 includes the steps of: providing a buried N+ region 52 in the substrate; forming an intrinsic epitaxial layer 12 onto the N+ region; etching trenches 18, 20 through the intrinsic epitaxial layer to thereby form a desired isolation region 16 of intrinsic epitaxial material; laterally etching a cavity 22 underneath the desired isolation region; and, forming an insulation layer 24 of insulation material along the bottom of the desired isolation region exposed by the former etching steps.

Abstract: An interferometer 10 for measuring the position of the process surface 21 of a substrate 20 includes a coherent light source 12 for providing a light beam 14 which is partially transmitted and partially reflected by a beam splitter 16. The reflected light beam 18 is reflected off of the process surface 21 and the transmitted light beam 30 is reflected off of a translator 32 which vibrates a predetermined distance at a predetermined frequency. The phase shift between the light beams 22, 31 reflected off of translator 32 and the process surface 21 is measured using a photodetector 24, which provides an output signal 26 to a feedback servo unit 28. The servo unit 28 provides an output signal 38 which controls the vibration of translator 32. The output signal 38 of servo unit 28 is also indicative of the position of the process surface 21.

Abstract: A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.

Abstract: A stretching machine includes a center stand having horizontal bars, vertical stand bars and cross bars for providing a support for a person to hold onto. A pair of movable foot supports include brackets with rollers that translate along a pair of elevated translation bars which extend outward from the center stand to allow the person to easily extend his/her feet away from the center stand.

Abstract: A method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter includes the steps of: passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution; transferring the wafer into a high vacuum environment; heating the wafer to between 400.degree. and 700.degree. C.; exposing the monocrystalline silicon surface to a gas having a partial pressure of oxygen of between 10.sup.-5 to 1 Torr for between 1 and 100 minutes; and, depositing polysilicon onto the monocrystalline silicon surface.

Abstract: An electrostatic chuck 8 assembly includes, from top to bottom: a top multilayer ceramic insulating layer 10; an electrostatic pattern layer 12 having a conductive electrostatic pattern 16 disposed on a multilayer ceramic substrate; a multilayer ceramic support layer 20; and, a heat sink base 30 having a backside cooling channels machined therein. Layers 12, 12 and 20 are bonded together using multilayer ceramic techniques and the heatsink base 30 is brazed to the bottom of the multilayer ceramic support layer 20.

Abstract: A liquid interface cooling chuck assembly 10 includes a clamping section 12 having a top surface 16 with three separate cooling circuit grooves machined therein and a bottom surface 64 having a double spiral cooling circuit machined therein. The clamping section 12 is soldered to the flat top surface 18 of the support section 14 which as a bottom surface having structural ribs machined therein. Liquid is provided to the three cooling circuits of clamping section 12 to provide a liquid interface between a wafer and the top surface 16 of the clamping section 12. A cooling fluid is also circulated through the bottom surface cooling circuit.