Abstract: A non-volatile memory device has a plurality of blocks each of which can be erased simultaneously. Each block has a plurality of sectors. A status byte comprising of non-volatile memory cells is associated with each sector. A status circuit receives signals stored in each of the status bytes and generates a status signal indicative of the status of the block.
Type:
Grant
Filed:
March 29, 1999
Date of Patent:
November 9, 1999
Assignee:
Silicon Storage Technology, Inc.
Inventors:
Dongsheng Xing, Simpson (ShinChu) Tao, Frank (Fong-Long) Lin