Abstract: A method for isolating a film from a substrate 50 includes the steps of: providing an N+ layer 52 on the substrate 50; forming an insulation layer 54 onto the N+ doped layer 52; etching a pair of trenches 56, 58 through the insulation layer 52 to thereby form an isolation region 60 of insulation material; laterally etching a cavity 62 underneath the isolation region; and, forming a film 64 onto the isolation region.
Type:
Grant
Filed:
October 23, 1991
Date of Patent:
August 3, 1993
Assignee:
International Business Machines Corporation
Inventors:
Klaus D. Beyer, Victor J. Silvestri, Andrie S. Yapsir