Abstract: An integrated circuit die comprises a device layer comprising a plurality of semiconductor devices; an interconnect layer comprising a plurality of interconnect paths connecting the semiconductor devices and embedded in a dielectric material; and a plurality of hard nanoparticles embedded in the dielectric material of the interconnect layer, the hard nanoparticles having a hardness greater than a hardness of the dielectric material and of a hardness of the interconnect paths.

Abstract: A apparatus and method for correcting a process critical layout includes characterizing the influence of individual ones of a set of worst case process variations on a simulated nano-circuit layout design and then correcting layout geometries in the simulated nano-circuit layout based on such characterizations.

Abstract: Apparatus and methods are provided for reducing or eliminating the progression of myopia, including a lens having an intentionally created aberration pattern for reducing or eliminating the progression of myopia. The aberration pattern may comprise a positive spherical aberration that produces a wavefront error in which the paracentral wavefront is disposed in front of the retina, thereby producing a signal that counters axial length growth of the eye and preventing the progression of myopia.

Abstract: The present invention relates to compositions comprising various vitamins and minerals and methods for using these compositions for nutritional supplementation in, for example, pregnant or lactating subjects.

Abstract: This invention relates to a method for real time monitoring and verifying optical proximity correction (OPC) models and methods in production. Prior to OPC is performed on the integrated circuit layout, a model describing the optical, physical and chemical processes involving lithography should be obtained accurately and precisely. In general, the model is calibrated using the measurements obtained by running wafers through the same lithography, patterning, and etch processes. In this invention, a novel real time method for verifying and monitoring the calibrated model on a production or monitor wafer is presented: optical proximity corrected (OPC-ed) test and verification structures are placed on scribe lines or cut lines of the production or monitor wafer, and with pre-determined schedule, the critical dimensions and images of these test and verification structures are monitored across wafer and across exposure field.