Abstract: Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4,  where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3,  where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3,  where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: A water repellent for application to glass, comprising disilazane with the general formula in which n and n′ are the same or different integers having values from 2 to 20, and water-repellent glass whose surface has been treated with said water repellent.

Abstract: An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

Abstract: To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

Abstract: An alkoxyhydridosiloxane resin composition comprising ROSiO3/2 siloxane units and HSiO3/2 siloxane units wherein R is an alkyl group having 10 to 28 carbon atoms, wherein the alkoxyhydridosiloxane resin contains an average from 5 to 40 mole percent silicon bonded alkoxy groups, and wherein the alkoxyhydridosiloxane resin contains an average of at least 45 mole percent silicon bonded hydrogen atoms. While not represented by the structure, the resins may also contain a small number of atoms which have either 0 or 2 hydrogen atoms attached thereto and/or a small number of SiC groups such as CH3SiO3/2 or HCH3SiO2/2 groups. These resins are useful for forming nanoporous silicone resin coatings having low dielectric constant coatings useful for electrical insulating coatings on electronic devices.

Abstract: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R2SO4H and alkali metal salts thereof, where R2 is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

Abstract: Soluble silicone resin compositions having good solution stability and a method for their preparation. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4, where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3, where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3, where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins.

Abstract: A cyclic organosilicon compound comprising one aliphatic unsaturation described by formula where each R is an independently selected hydrocarbon radical free from aliphatic unsaturation comprising 1 to about 18 carbon atoms; each X is independently selected from the group consisting of halogen, alkoxy, acyloxy, and ketoximo; m is an integer from 2 to 7; p is an integer from 0 to 6; m+p is an integer from 2 to 8; n is 0, 1, or 2; each Z is independently selected from the group consisting of divalent hydrocarbon radicals free of aliphatic unsaturation comprising about 2 to 18 carbon atoms and a combination of divalent hydrocarbon radicals and siloxane segments; and Y is selected from the group consisting of hydrocarbon radicals comprising one aliphatic unsaturation and 2 to about 18 carbon atoms and a combination comprising one aliphatic unsaturation of hydrocarbon radicals, siloxane segments, and a divalent hydrocarbon radical free of aliphatic unsaturation comprising 2 to about 18 carbo

Abstract: A silicone rubber composition comprising (A) 100 weight parts of a polydiorganosiloxane mixture comprising (i) 1 to 99 wt % polydiorganosiloxane having at least two silicon atom-bonded vinyl groups per molecule and (ii) the remaining percentage of polydiorganosiloxane having at least two non-vinyl silicon atom-bonded alkenyl groups per molecule, (B) a polyorganosiloxane having at least two silicon atom-bonded hydrogen atoms per molecule, (C) 0.

Abstract: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of alkylsulphonic acid hydrate, alkali metal salt of alkylsulphonic acid, arysulphonic acid hydrate, and alkali metal salt of arylsulphonic acid.

Abstract: A filler/adhesive agent for display units containing a condensation reaction curable silicone composition including air oxidation-curable unsaturated compounds and for use as a filler or adhesive in display units whose construction is such that the cured product of said composition is exposed in the display section, which composition is capable of forming matte finished cured products with insignificant surface tact, is disclosed.

Abstract: The instant invention pertains to a curable composition comprising (a) substance that generates free radicals under the action of ultraviolet radiation and (b) polymer molecule bearing functionality capable of polymerization under the action of said free radicals wherein (a) is a benzoin ether and makes up from 0.001 to 10 wt % of the total composition and (b) has the following formula (R3SiO1/2)a(R′2SiO2/2)b(R″SiO3/2)c(SiO4/2)d in which R, R′, and R″ are each H or C1 to C10 hydrocarbyl possibly containing a heteroatom and at least 10 % is, for example, a vinyl group, and a+b+c+d=1. The composition of the instant invention is a storage-stable UV-curable composition that does not suffer from cure inhibition by air or oxygen, that is very efficiently cured by low doses of UV radiation, and provides a highly heat-resistant cured pattern by heating after pattern formation.

Abstract: A method for manufacturing an organic solvent-soluble hydrogenated octasilsesquioxane-vinyl group-containing compound copolymer comprising reacting 1 mol of (A) a hydrogenated octasilsesquioxane described by formula I with 0.2 to less than 3 mol of (B) a divinyl group-containing compound described by formula (2) CH2═CH—L—CH═CH2   Formula 2 where L is selected from the group consisting of (a) a divalent hydrocarbon group comprising 3 to 10 carbon atoms and (b) —(SiR2O)m—SiR2—, where each R is independently selected from the group consisting of alkyls comprising 1 to 6 carbon atoms and aryls comprising 6 to 9 carbon atoms and 1≦m≦10; in the presence of a hydrosilylation catalyst.

Abstract: A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si—H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.

Abstract: This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

Abstract: This invention pertains to a method for producing thermally stable multi-layer coatings and the coatings produced therefrom. The multi-layer coating is comprised of a first coating produced from hydrogen silsesquioxane having a thickness of 1.25 to 2.25 &mgr;m and a second coating comprising silicon dioxide having a thickness of at least 100 nm. The method for producing the first coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of 150° C. to 500° C. for a sufficient period of time to produce a crack-free coating having a thickness of 1.25 &mgr;m to 2.25 &mgr;m. The second coating is produced by depositing, preferably by PECVD, silicon dioxide over the first coating at a thickness of at least 100 nm.

Abstract: The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.

Abstract: A method for preparing a nanoporous silicone resin which can be used to form low dielectric constant films useful for electrical insulating coatings on electronic devices comprising (A) contacting a hydridosilicon containing resin with a 1-alkene comprising about 8 to 28 carbon atoms in the presence of a platinum group metal-containing hydrosilation catalyst effecting formation of an alkylhydridosiloxane resin where at least 5 percent of silicon atoms are substituted with at least one group comprising about 8 to 28 carbon atoms and at least 45 percent of silicon atoms are substituted with at least one hydrogen atom and (B) heating the alkylhydridosiloxane resin of step (A) at a temperature sufficient to effect curing and thermolysis of alkyl groups comprising about 8 to 28 carbon atoms from the silicon atoms thereby forming a nanoporous silicone resin.