Patents Represented by Attorney Riddles Alvin J.

Find this attorney in the Justia Lawyer Directory

  • Self-aligned heterojunction transistor
    Patent number: 4872040
    Abstract: A vertical heterojunction equal area transistor and starting structure therefor is provided in which three epitaxial layers structure with wide band gap external layers and narrower band gap center layer is provided with peripheral impurity concentrations such that the area around the wide gap electrodes is high resistivity and the area around the center narrower gap region is high conductivity. A bipolar transistor of GaAs-Ge-GaAs is described.
    Type: Grant
    Filed: April 23, 1987
    Date of Patent: October 3, 1989
    Assignee: International Business Machines Corporation
    Inventor: Thomas N. Jackson