Patents Represented by Attorney, Agent or Law Firm Robert A. McLauchlan, III
  • Patent number: 6464944
    Abstract: An apparatus is provided for treating pollutants in a gaseous stream. The apparatus comprises tubular inlets for mixing a gas stream with other oxidative and inert gases for mixture and flame production within a reaction chamber. The reaction chamber is heated by heating elements and has an interior wall with orifices through which heated air enters into the central reaction chamber. The oxidized gases are treated also for particles removal by flowing through a packed bed. The packed bed is cooled and its upper portion with air inlets to enhance condensation and particle growth in the bed. The treated gas stream is also scrubbed in a continuous regenerative scrubber comprising at least two vertically separated beds in which one bed can be regenerated while the other is operative so that the flow may be continuously passed through the bed.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: October 15, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Robert R. Moore, James D. Getty, Ravil Safiullin
  • Patent number: 6343476
    Abstract: A gas storage and dispensing system comprising a vessel for holding a gas at a desired pressure. The vessel has a gas pressure regulator in its interior volume, to maintain pressure of dispensed gas at a desired pressure determined by the set point of the regulator. A second gas pressure regulator may be joined in series gas flow communication with the first gas pressure regulator, with the second gas pressure regulator being in initial contact with gas that is dispensed prior to its flow through the first gas pressure regulator, and with the set point pressure of the second gas pressure regulator being at least twice the set point pressure of the first gas pressure regulator.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: February 5, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Luping Wang, Glenn M. Tom
  • Patent number: 6331211
    Abstract: A method and apparatus for forming a low dielectric constant polymeric film on a substrate, by liquid delivery of a parylene precursor reagent, in the form of an organic solution or a neat liquid, subsequent flash vaporization of the neat liquid or organic solution, pyrolytic “cracking” of the precursor to form the reactive monomer and/or reactive radical species, and condensation and polymerization of the monomer and/or reactive radical species to form a low dielectric constant polymeric film on the substrate. The low dielectric constant polymeric film may comprise a parylene film, formed from a precursor such as [2.2]paracyclophane, an alkyl- and/or halo-substituted derivative thereof, or an analogous compound of a p-xylene derivative.
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: December 18, 2001
    Assignee: Advanced Technology Material, Inc.
    Inventors: Chongying Xu, Thomas H. Baum, Ralph J. Carl, Edward A. Sturm
  • Patent number: 6322600
    Abstract: A planarization composition is set forth for chemical mechanical planarization of dielectric layers for semiconductor manufacture. The composition comprises spherical silica particles having an average diameter of from 30 nm to about 400 nm, and a narrow range of particle sizes, wherein about 90% of the particles is within 20% of the average particle diameter. The composition includes a liquid carrier comprising up to about 9% alcohol and an amine hydroxide in the amount of about 0.2 to about 9% by weight. The pH of the composition is in the range of about 9 to about 11.5, and the remainder of the solution is water. The composition has low amounts of metal ions, and the composition is used for thinning, polishing and planarizing interlayer dielectric thin films, shallow trench isolation structures, and isolation of gate structures. The invention also comprises methods for using the planarization composition in the manufacture of semiconductor devices.
    Type: Grant
    Filed: April 22, 1998
    Date of Patent: November 27, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Richard Brewer, Thomas J. Grebinski, James E. Currie, Michael Jones, William Mullee, Ann Nguyen
  • Patent number: 6323168
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: chelating agent 1-15% water 25-99%  polar organic solvent 0-60% In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).
    Type: Grant
    Filed: July 3, 1996
    Date of Patent: November 27, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas J. Kloffenstein, Daniel N. Fine
  • Patent number: 6322756
    Abstract: An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises an oxidation unit to which an oxygen-containing gas such as ozone may be added, with input of energy (e.g., thermal, radio frequency, electrical, microwave, etc.), to effect oxidation of oxidizable species in the effluent, such as halocompounds (e.g., chlorofluorocarbons, perfluorocarbons), CO, NF3, nitrogen oxides, and sulfur oxides). The effluent gas stream treatment system may include a wet scrubber associated with the oxygen-containing gas source, so that the gas stream is contacted with the oxygen-containing gas during the wet scrubbing operation, to enhance removal of oxidizable species in the gas stream during treatment.
    Type: Grant
    Filed: May 7, 1999
    Date of Patent: November 27, 2001
    Assignee: Advanced Technology and Materials, Inc.
    Inventors: Jose I. Arno, Mark Holst, Kent Carpenter, Scott Lane
  • Patent number: 6316797
    Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
    Type: Grant
    Filed: February 19, 1999
    Date of Patent: November 13, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
  • Patent number: 6306807
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: October 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6296025
    Abstract: A chemical delivery system which utilizes multiple techniques to achieve a suitable chemical purge of the chemical delivery system is provided. A purge sequence serves to purge the manifold and canister connection lines of the chemical delivery system prior to removal of an empty chemical supply canister or after a new canister is installed. More particularly, a purge technique which may utilizes a variety of combinations of a medium level vacuum source, a hard vacuum source, and/or a liquid flush system is disclosed. By utilizing a plurality of purge techniques, chemicals such as TaEth, TDEAT, BST, etc. which pose purging difficulties may be efficiently purged from the chemical delivery system. The chemical delivery system may also be provided with an efficient and conveniently located heater system for heating the chemical delivery system cabinet.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: October 2, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: John N. Gregg, Craig M. Noah, Robert M. Jackson
  • Patent number: 6295861
    Abstract: A sensor device for detecting the presence of a gas species in a gas environment susceptible to the presence of same. The sensor device may include a piezoelectric crystal coated with a sensor material having adsorptive affinity for the gas species, with an electric oscillator arranged for applying an oscillating electric field to the piezoelectric crystal to generate an output frequency therefrom indicative of the presence of the gas species when present in the gas environment, when the gas environment is exposed to the piezoelectric crystal. Another aspect of the invention involves a porous polymeric material that may be employed as a sensor material on a piezoelectric crystal sensor device, as well as a quartz microbalance holder that enables reactor gas monitoring. The sensor device alternatively may comprise an optical sensor arranged in a non-contaminating fashion in relation to the gas environment being monitored.
    Type: Grant
    Filed: January 28, 1999
    Date of Patent: October 2, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Mackenzie E. King
  • Patent number: 6280651
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: August 28, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Patent number: 6280507
    Abstract: An air manager for the containment of hazardous fumes over a liquid chemical tank in exhausted equipment and systems in a clean room. A powered, filtered airflow source forces filtered air through a plenum coextensive with a transverse dimension of the chemical tank, in a sheet-like airflow stream over the liquid surface. The airflow is captured at the opposite side of the liquid chemical tank and directed to a powered exhaust. The air manager works cooperatively with the clean room laminar airflow, dramatically increasing the efficiency of the local exhaust. Critical Capture Velocity over the entire surface of the tank is maintained, assuring complete containment of chemical fumes. Optional airflow guides positioned along the sides of the chemical tank may be employed to confine the air stream to the area over the liquid surface.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: August 28, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Bruce Walker