Patents Represented by Attorney, Agent or Law Firm Robert A. McLauchlin, III
  • Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
    Patent number: 6329088
    Abstract: A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
    Type: Grant
    Filed: June 24, 1999
    Date of Patent: December 11, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Barbara E. Landini, George R. Brandes, Michael A. Tischler