Abstract: In microelectronic manufacture, vertical interconnects in integrated circuits are made by the selective deposition of copper onto SiO.sub.2, which is controlled by reacting the SiO.sub.2 surface with chlorotrimethylsilane or dimethyldichlorosilane. These silanes interact with the surface hydroxyl groups to reduce the number of sites at which (hfac)Cu(VTMS) can adsorb and react, therefore providing selectivity.

Abstract: Metal oxides are formed at low temperatures by the process of providing a class of divalent metal hydroxycarboxylates designed to react with metal alkoxide compounds such as B(OR').sub.4, where B=Ti, Zr, Sn and R'=an alkyl group with the elimination of two equivalents of alcohol to form species with integral or non-integral stoichiometry. The reaction produces an intermediate compound which after thermolysis at 350.degree. C. in O.sub.2, results in formation of crystalline perovskite phase materials of general formula ABO.sub.3, A.sub.x A'.sub.1-x BO.sub.3 and AB.sub.x B'.sub.1-x O.sub.3.