Abstract: An accurate speech recognition system capable of rapidly processing greater varieties of words and operable in many different devices, but without the computational power and memory requirements, high power consumption, complex operating system, high costs, and weight of traditional systems. The utilization of individual letter utterances to transmit words allows voice information transfer for both person-to-person and person-to-machine communication for mobile phones, PDAs, and other communication devices.

Abstract: This invention discloses a novel design for receiving electromagnetic signals broadcasted from at least two of satellite clusters and collected by a single dish antenna. At least two signal feeds are used to feed the signals to a processing circuit. The processing circuit performs signal selection, amplification, and frequency conversion. Corrective lens are used to ensure uniform wavefront of the electromagnetic signals received by the signal feeds located farther away from the focal point of the dish antenna. A convenient adjustment device is provided for adjustment of the relative positions of the signals feeds to the dish antenna.

Abstract: This invention discloses a novel design to solve the clock skew problems in a data processing system by using PLL circuitry inside a memory controller in combination with an adjustable delay element to provide a write clock signal, a read clock signal, and a memory clock signal for triggering the write data buffer and the read buffer of the memory controller, and the memory module respectively. The memory clock signal has a phase lead relative to the read clock signal and a phase lag relative to the write clock signal. The phase lead and the phase lag compensate for phase differences between clock signals arriving at the read data buffer and the write data buffer of the memory controller, and the memory module respectively due to phase delays resulting from the different paths for transmitting clock signals, thereby synchronizing the clock signals.

Abstract: This invention discloses a novel design to fabricate a ring-like capacitor in a semiconductor memory device for increasing the area of the capacitor electrodes. The ring-like conductive structure of the electrode of the capacitor includes a mushroom-shaped member having a flat-headed cap and a stem coupled to the source region of the semiconductor memory device, a solid cylindrical member disposed on the cap of the mushroom-shaped member, and a side-wall spacer being a hollow cylindrical member disposed on the cap of said mushroom-shaped member to increase the area of the capacitor electrodes thereby increasing the capacitance of the capacitor to provide a sufficient capacitance while maintaining high integration in semiconductor memory cells.

Abstract: This invention discloses a novel design for increasing the surface area of a stacked capacitor used in DRAM devices. The upper and lower plates of the capacitor comprises of several concave structures. The concave structures are first produces on an LS-SOG layer using focused ion beam lithography, which is then mapped to the lower plate of the capacitor. A dielectric layer is deposited, after which an upper plate is formed. The concave structures increases the plate area, thereby increasing charge storage capacity.

Abstract: This invention discloses an ergonomically designed keyboard which alleviates carpal tunnel syndrome. It comprises a keyboard and a tilting mechanism which tilts the keyboard so that the keys proximate to the user become elevated relative to the keys farther away from the user; that is, the keyboard slopes downwards away from the user. The tilting mechanism allows automatic keyboard tilting upon opening a notebook computer's screen lid, and also manual angular adjustment of the keyboard to fit the user's needs.

Abstract: A semiconductor processing method for forming self-aligned T-gate Lightly-Doped Drain (LDD) device of recessed channel is presented. The method comprises the steps of covering a substrate with pad oxide, forming a lightly-doped layer by ion implantation, depositing a silicon nitride layer on the surface of the pad oxide, and etching the silicon nitride layer according to a predefined mask pattern to expose the silicon oxide layer and to form a gate region. A polysilicon spacer region is formed on the side-walls of the silicon nitride layer. Anisotropic etch is used to etch the polysilicon spacer region, and at the same time etch the exposed pad oxide and a portion of the substrate to form a T-shaped groove. An amorphous silicon layer is deposited in the T-shaped groove after forming a thin oxide layer, then the amorphous silicon deposited apart from the T-shaped groove region is removed. The silicon nitride layer is removed to form a T-gate.