Patents Represented by Attorney Robert K. Duncan
  • Patent number: 4238772
    Abstract: A scene is scanned line-by-line with a video camera transforming the spatial distribution of intensities present in the scene into a time-varying intensity function which is then filtered in real time. The time-varying function is passed through an electrical filter with adjustable passband and center frequency, and the filtered image is written on a storage tube or other suitable fast-memory array. The stored image which has been spatially filtered in the x direction is then scanned and read line-by-line (in the y direction) with the new scan lines perpendicular to the direction in which the image was written on the storage tube (or memory array). This transforms the spatial distribution of intensities on the storage tube (or memory array) into a time-varying function of intensities. This time-varying function is then passed through a second filter with adjustable passband and center frequency.
    Type: Grant
    Filed: August 3, 1979
    Date of Patent: December 9, 1980
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Henning E. von Gierke, Mark W. Cannon, Jr.
  • Patent number: 4150291
    Abstract: Defects and irregularities in fiberglass-aluminum honeycomb structures are visually displayed by ionization corona formed by a relatively high potential on a conductive mesh screen contained in transparent dielectric hand-held probe. Both the frequency and the amplitude of the potential are controllable by hand operated controls on the probe to provide optimum electrographic images in the ionization of the air in the interelectrode gap between the probe electrode and the structure being examined.
    Type: Grant
    Filed: December 23, 1977
    Date of Patent: April 17, 1979
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Lee R. Gulley, Jr.
  • Patent number: 3940847
    Abstract: Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.
    Type: Grant
    Filed: July 26, 1974
    Date of Patent: March 2, 1976
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Yoon Soo Park, Bok Kyoon Shin